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首页> 外文会议>Symposium on CMOS Front - End Materials and Process Technology; 20030422-20030424; San Francisco,CA; US >Study Using Elements from Group IIA as Barriers for Dopant Penetration into Gate Dielectrics and Getters for Metallic Ion Contamination
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Study Using Elements from Group IIA as Barriers for Dopant Penetration into Gate Dielectrics and Getters for Metallic Ion Contamination

机译：使用IIA组元素作为阻挡层将掺杂剂渗透到栅极电介质和用于金属离子污染的吸气剂的研究

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摘要

Various mechanical and chemical processes may introduce contamination, such as metallic ions, during the creation of an integrated circuit. This can cause device degradation and leakage current. Neutral dopants such as boron can penetrate the silicon substrate from a highly doped polysilicon gate during anneal cycles causing leakage and threshold voltage shifts. Quantum mechanical modeling using periodic boundary conditions and a cluster approximation were performed in a search for a modification of silicon dioxide that would attract or trap ions and fast diffusing dopant species to reduce or eliminate such problems. Examination of calcium and strontium interactions with some metal ions in silicon dioxide was conducted. Strong metal ion attraction to both calcium and strontium was found. Interaction of calcium with boron and fluorine in oxide and calcium interaction with boron in other dielectric materials was also studied. Attraction was predicted to occur between calcium and boron whether they were distributed in silicon dioxide, hafnium or zirconium orthosilicate. This study leads us to propose incorporation of calcium or strontium into critical dielectric layers as a promising approach to trap ions and reduce boron penetration through the gate oxide. Predictions were used to design relevant experiments which revealed that calcium implanted into oxide traps boron and fluorine.
机译：在创建集成电路期间，各种机械和化学过程可能会引入污染，例如金属离子。这会导致器件性能下降和泄漏电流。在退火周期中，中性掺杂剂（例如硼）会从高掺杂多晶硅栅极穿透硅衬底，从而导致泄漏和阈值电压漂移。进行了使用周期性边界条件和簇近似的量子力学建模，以寻找能够吸引或捕获离子并快速扩散掺杂物种类的二氧化硅以减少或消除此类问题的改性方法。进行了钙和锶与二氧化硅中某些金属离子的相互作用的检查。发现金属离子对钙和锶都具有强吸引力。还研究了钙与硼和氟在氧化物中的相互作用以及钙与硼在其他介电材料中的相互作用。无论钙和硼是否分布在二氧化硅，ha或原硅酸锆中，都预计会发生吸引力。这项研究使我们建议将钙或锶掺入关键的介电层中，作为一种有前途的捕获离子和减少硼穿过栅氧化物的方法。预测用于设计相关实验，该实验表明钙植入到氧化物陷阱中会捕获硼和氟。

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