【24h】

Studies of surface state densities of semiconductors by room-temperature photoreflectance

机译:室温光反射法研究半导体的表面态密度

获取原文
获取原文并翻译 | 示例

摘要

In this study, we develop a novel approach to determine the surface Fermi level and the surface state densities of semiconductors. The built-in electric field and thus the surface barrier height are evaluated from the Franz-Keldysh oscillations in the PR spectra. Based on the thermionic-emission theory and current-transport theory, the surface state density as well as the pinning position of the surface Fermi level can be determined from the dependence of the surface barrier height on the pump beam intensity. Even though this method is significantly simpler, easier to perform, and time efficient compared with other approaches, the results obtained agree with the literature.
机译:在这项研究中,我们开发了一种新颖的方法来确定半导体的表面费米能级和表面态密度。根据PR谱中的Franz-Keldysh振荡评估了内置电场以及表面阻挡层的高度。基于热电子发射理论和电流传输理论,可以根据表面势垒高度对泵浦束强度的依赖性来确定表面状态密度以及表面费米能级的钉扎位置。尽管与其他方法相比,该方法明显更简单,更易于执行且省时,但所获得的结果与文献一致。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号