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首页> 外文会议>Symposium on Compound Semiconductor Surface Passivation and Novel Device Processing held April 5-7, 1999, San Francisco, California,U.S.A. >Selective oxidation to form dielectric apertures for low threshold vcsels and microcavity spontaneous light emitters
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Selective oxidation to form dielectric apertures for low threshold vcsels and microcavity spontaneous light emitters

机译：选择性氧化以形成用于低阈值vcsel和微腔自发发光体的介电孔

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摘要

Selective oxidation of AlAs (or AlGaAs) can be used to form buried, low refractive index apertures within high Q Fabry-Perot microcavities. These apertures provide electrical and optical confinement, and for veritical-cavity surface-emitting lasers (VCSELs) have resulted in ultra-low threshold room temperature lasing with threshold currents under 25 um A. When used with quantum dot light emitters. the oxide-apertured microcavity can also be used to control the spontaneous lifetime. We describe the microscavity fabrication based on high Q Fabry-Perot microcavities and selective oxidation, and design and cavity Q constraints for apertured microscavities for quantum wel and quantum dot VCSELs and microcavity LEDs. Threshold current densities of quantum well VCSELs are as low as 98 A/cm~2, while ground state lasing is also obtained for quantum dot VCSELs. Our initial experiments on microcavities with very small apertures and quantum dot emitters demonstrate up to a factor of 2.3 increase in the spontaneous emission rate.
机译：AlAs（或AlGaAs）的选择性氧化可用于在高Q Fabry-Perot微腔内形成掩埋的低折射率孔。这些孔提供了电和光学限制，并且对于垂直腔表面发射激光器（VCSEL），已经产生了阈值电流低于25 um A的超低阈值室温激光。与量子点发光器一起使用时。带有氧化物的微腔也可用于控制自然寿命。我们描述了基于高Q Fabry-Perot微腔和选择性氧化的微腔制造，以及用于量子wel和量子点VCSEL和微腔LED的带孔微腔的设计和腔Q约束。量子阱VCSEL的阈值电流密度低至98 A / cm〜2，而量子点VCSEL也获得基态激光。我们对具有非常小孔径和量子点发射器的微腔的初步实验表明，自发发射速率最多可提高2.3倍。

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