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首页> 外文会议>Symposium on Compound Semiconductor Surface Passivation and Novel Device Processing held April 5-7, 1999, San Francisco, California,U.S.A. >Low energy, high density plasma (ICP) for low defect etching and deposition applications on compound semiconductors
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Low energy, high density plasma (ICP) for low defect etching and deposition applications on compound semiconductors

机译：低能量，高密度等离子体（ICP），适用于化合物半导体上的低缺陷蚀刻和沉积应用

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摘要

The use of a low ion energy of an extremely dense plasma has been studied as a dry etching as well as a thin film deposition tool (same source, two different reactors) for InP and GaAs or in the case of deposition to obtain high deposition rates. In all cases minimum ion damanges are induced on the processed substrate. Both technologies are presented here from the point of view of material analysis as well as device processing demonstration. For etching, the gate recess of an InP-based HEMT has bene addressed as one of the key technological step that requires such properties for good device performances. InGaAs/InAlAs HEMT like structures have been grown and the recess of the InGaAs layer has been conducted with a 13 eV SiCl_4 inductively coupled plasma (ICP). DLTS and AFM measurements made on the exposed AllnAs surface after InGaAs removal indicate that device quality on its electrical and structural properties are achieved. Passivation of fully processed HEMT devices with a ICP enhanced chemical vapor deposition (ICPECVD) silicon nitride film is being studied.
机译：已经研究了使用极低密度等离子体的低离子能量作为干法蚀刻以及薄膜沉积工具（同一源，两个不同的反应器）用于InP和GaAs的方法，或者在沉积过程中获得高沉积速率的方法。在所有情况下，在处理后的基板上都会产生最小的离子损伤。从材料分析以及设备处理演示的角度介绍了这两种技术。对于蚀刻，基于InP的HEMT的栅极凹槽已被视为关键技术步骤之一，该关键步骤要求具有此类特性以实现良好的器件性能。已经生长了类似InGaAs / InAlAs HEMT的结构，并已用13 eV SiCl_4电感耦合等离子体（ICP）进行了InGaAs层的凹陷。 InGaAs去除后，在暴露的AllnAs表面进行DLTS和AFM测量，表明在电气和结构特性上均达到了器件质量。正在研究用ICP增强化学气相沉积（ICPECVD）氮化硅膜对完全加工过的HEMT器件进行钝化。

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