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首页> 外文会议>Symposium on Compound Semiconductor Surface Passivation and Novel Device Processing held April 5-7, 1999, San Francisco, California,U.S.A. >High-density plasma-induced etch damage of GaN
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High-density plasma-induced etch damage of GaN

机译：高密度等离子体诱导的GaN蚀刻损伤

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摘要

Anisotropic, smooth etching of the group-III nitrides has been reported at relatively high rates in high-density plasma etch systems. However, such etch results are often obtained under high dc-bias and/or high plasma flux conditions where plasma induced damage can be significant. Despite the fact that the group-III nitrides have higher bonding energies than more ocnventional III-V compounds, plasma-induced etch damage is still a concern. Attempts to minimize such damage by reducing the ion energy or increasing the chemical activifty in the plasma often result in a loss of etch rate or anisotropy which significantly limits critical dimensions and reduces the utility of the process for device applications requiring vertical etch profiles. It is therefore necessary to develop plasma etch processes which couple anisotropy for critical dimension and sidewall profile control and high etch rates with low-damage for optimum device performance. In this study we report changes in sheet resistance and contact resistance for n- and p-type GaN samples exposedto an Ar inductively coupled plasma (ICP). In general, plasma-induced damage was more sensitive to ion bombardment energies as compared to plasma flux. In addition, p-GaN was typically more sensitive to plasma-induced damage as compared to n-GaN.
机译：在高密度等离子刻蚀系统中，III族氮化物的各向异性，平滑刻蚀已有所报道。但是，这种蚀刻结果通常是在高直流偏置和/或高等离子体通量条件下获得的，在这些条件下，等离子体引起的损坏可能会很大。尽管第III族氮化物比更多的III-V族化合物具有更高的键合能，但是等离子体引起的蚀刻损伤仍然是一个问题。试图通过减少离子能量或增加等离子体中的化学活性来最小化这种损害，通常会导致蚀刻速率或各向异性的损失，这严重地限制了临界尺寸并降低了该方法在需要垂直蚀刻轮廓的器件应用中的实用性。因此，有必要开发等离子体刻蚀工艺，该工艺将各向异性用于关键尺寸和侧壁轮廓控制，以及将高刻蚀速率与低损伤耦合在一起，以实现最佳的器件性能。在这项研究中，我们报告了暴露于Ar电感耦合等离子体（ICP）的n型和p型GaN样品的薄层电阻和接触电阻的变化。通常，与等离子体通量相比，等离子体引起的损伤对离子轰击能量更敏感。另外，与n-GaN相比，p-GaN通常对等离子体引起的损伤更敏感。

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