Structure of chemically passivated semiconductor surfaces determined using x-ray absorption spectroscopy

机译：使用X射线吸收光谱确定化学钝化半导体表面的结构

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The structure of monolayer-passivated single crystal semiconductor surfaces has been studied using synchrotron radiation X-ray absorption fine structure spectroscopy (XAFS). The near edge and extended fine structure signals, supported in some cases by first-principles calculations. have been used to investigate Ge(111)-Cl; GaAs(111)-Cl; GaAs(111)A-S,GaAs(111)B-S and GaAs(001)-S. The use of a solid state Ge X-ray fluorescence array detector has led to significant improvements in data quality and thus structural accuracy. The relationship between the derived surface structures and the development of improved passivated surfaces is discussed.

机译：已经使用同步加速器辐射X射线吸收精细结构光谱学（XAFS）研究了单层钝化的单晶半导体表面的结构。第一原理计算在某些情况下支持近边缘和扩展的精细结构信号。已用于研究Ge（111）-Cl; GaAs（111）-Cl; GaAs（111）A-S，GaAs（111）B-S和GaAs（001）-S。固态Ge X射线荧光阵列检测器的使用已导致数据质量以及结构精度的显着提高。讨论了派生的表面结构与改进的钝化表面之间的关系。

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《Symposium on Compound Semiconductor Surface Passivation and Novel Device Processing held April 5-7, 1999, San Francisco, California,U.S.A.》|1999年|p.31-42|共12页
会议地点 San Francisco CA(US)
作者
A.P.Hitchcock; T.Tyliszczak; Z.H.Lu; P.Brodersen; M.W.C.Dharmawardana;
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正文语种 eng
中图分类无线电电子学、电信技术;
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Structure of chemically passivated semiconductor surfaces determined using x-ray absorption spectroscopy

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