Oxidation and carbon contamination in GaAs (100) wet treatments

机译：GaAs（100）湿法处理中的氧化和碳污染

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Oxidation and carbon contamination of n-type GaAs (100) surfaces have been investigated by x-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES) and secondary ion mass spectroscopy (SIMS) for a variety of cleaning and etching pretreatment procedures prior to immersion in either (NH_4)_2S aqueous solutions or S_2Cl_2 solution in dichloromethane. The study has shown that sulfur passivation removes surface oxide and minimize carbon contamination for surfaces treatedin (NH_4)_2S solutions. A significent oxygen and carbon contamination in the anodic passivation of GaAs (100) in (NH_4)_2S_x aqueous solution have bene quantitatively measured. In addition, pretreatment in basic solutions have shown minimal oxygen and carbon level in comparison with the scidic solutions. Surface pretreatment carried out ex-situ has shown a higher risk of surface contamination prior to sulfure passivation.

机译：已通过X射线光电子能谱（XPS），俄歇电子能谱（AES）和二次离子质谱（SIMS）研究了n型GaAs（100）表面的氧化和碳污染，以用于各种清洁和蚀刻预处理程序浸入（NH_4）_2S水溶液或S_2Cl_2二氯甲烷溶液中。研究表明，对于在（NH_4）_2S溶液中处理过的表面，硫钝化可以去除表面氧化物并使碳污染最小化。定量测定了（NH_4）_2S_x水溶液中GaAs（100）的阳极钝化过程中的大量氧气和碳污染。另外，与碱性溶液相比，在碱性溶液中的预处理显示出最低的氧和碳水平。在硫磺钝化之前，进行异地表面预处理显示出较高的表面污染风险。

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《Symposium on Compound Semiconductor Surface Passivation and Novel Device Processing held April 5-7, 1999, San Francisco, California,U.S.A.》|1999年|p.145-150|共6页
会议地点 San Francisco CA(US)
作者
R.F.Elbashnasawy; J.G.Mclnerney; G.Hughes;
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正文语种 eng
中图分类无线电电子学、电信技术;
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Oxidation and carbon contamination in GaAs (100) wet treatments

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