DX center energy level in In_xAl_1-xAs compounds

机译：In_xAl_1-xAs化合物的DX中心能级

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The presence of DX centers in In_xAl_1-xAs, primarily in the indirect protion of the In_xAl_1-xAs bandgap, has been determined using modulation doped In_xAl_1-xAs/In_yGa_1-uAs measurements. From the cooling bias experiment, the PPC, and self consistent Poisson and Schrodinger simulations the ratio of the ionized shallow donors to the DX centers is obtaiend. Using his ratio in the grand canonical ensemble (GCE) the energy level of DX centers is determined. It is found that the DX energy level merges with the conduction band at x approx = 0.42 and is resonant with the conduction band in higher indium concentration.

机译：已经使用调制掺杂的In_xAl_1-xAs / In_yGa_1-uAs测量确定了In_xAl_1-xAs中DX中心的存在，主要是In_xAl_1-xAs带隙的间接影响。从冷却偏差实验，PPC以及自洽Poisson和Schrodinger模拟得出，电离的浅施主与DX中心的比率是固定的。使用他在大规范合奏（GCE）中的比率，可以确定DX中心的能级。发现DX能级在x大约＝ 0.42处与导带合并，并在较高的铟浓度下与导带共振。

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《Symposium on Compound Semiconductor Surface Passivation and Novel Device Processing held April 5-7, 1999, San Francisco, California,U.S.A.》|1999年|p.151-162|共12页
会议地点 San Francisco CA(US)
作者
Huseyin Sari; Harry H.Wieder;
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正文语种 eng
中图分类无线电电子学、电信技术;
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1. DX centers in si-doped In_xAl_1-xAs (0.3≤x≤0.5) [J] . Mark Isler Solid-State Electronics . 2002,第4期

机译：DX以si掺杂的In_xAl_1-xAs（0.3≤x≤0.5）为中心
2. Identification of defect centers in Hg1-xCdxTe using their energy level composition dependence [J] . Journal of Applied Physics . 1985,第12期

机译：利用Hg1-xCdxTe的能级组成依赖性确定缺陷中心
3. Energy level of the Si-related DX-center in (Al_yGa_(1-y))_(1-x)In_xAs [J] . Stefan Heckelmann, David Lackner, Andreas W. Bett Applied Physics Letters . 2015,第10期

机译：（Al_yGa_（1-y））_（1-x）In_xAs中与Si有关的DX中心的能级
4. DX center energy level in In{sub}xAl{sub}(1-x)As compounds [C] . Huseyin Sari, Harry H. Wieder Symposium on compound semiconductor surface passivation and novel device processing . 1999

机译：DX中心能量水平在{sub} xal {sub}（1-x）中作为化合物
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6. Mutations to R. sphaeroides Reaction Center Perturb Energy Levels and Vibronic Coupling but Not Observed Energy Transfer Rates [O] . Moira L. Flanagan, Phillip D. Long, Peter D. Dahlberg, -1

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7. Fine Structures of Energy Levels of DX Centers in [O] . 肖细凤 2001

机译：DX中心能量水平的精细结构

DX center energy level in In_xAl_1-xAs compounds

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