Anodic sulfidation and model characterisation of GaAs (100) in (NH_4)_2S_x solution

机译：（NH_4）_2S_x溶液中GaAs（100）的阳极硫化和模型表征

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Electrochemical sulfidation of n-type GaAs (100) has been investigated under anodic conditions with a view to surface passivation for improved electronic and optical properties. This treatment has successfully removed the native oxide and formed a thick layer of gallium and arsenic sulfides displaying high durability against oxidation and optical degradation compared to conventional dipping treatment using (NH_4)_2S solution. X-ray photoelectron spectroscopy (XPS), Auger electorn spectroscopy (AES), secondary ion mass spectroscopy (SIMS) and atomic force microscopy (AFM) have been used to characterize the treated surfaces. These studies have been used to devise a structural model of the near-surface region. The results of Raman backscattering spectroscopy measurements indicate that there is a 35

机译：为了改善电子和光学性能，已在阳极条件下对n型GaAs（100）的电化学硫化进行了研究。与使用（NH_4）_2S溶液的常规浸渍处理相比，该处理已成功去除了天然氧化物并形成了一层厚的镓和硫化砷，显示出对氧化和光学降解的高耐久性。 X射线光电子能谱（XPS），俄歇电子能谱（AES），二次离子质谱（SIMS）和原子力显微镜（AFM）已用于表征处理过的表面。这些研究已被用来设计近地表区域的结构模型。拉曼背散射光谱测量结果表明存在35

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《Symposium on Compound Semiconductor Surface Passivation and Novel Device Processing held April 5-7, 1999, San Francisco, California,U.S.A.》|1999年|p.265-270|共6页
会议地点 San Francisco CA(US)
作者
R.F.Elbahnasawy; J.G.McInerney; P.Ryan; G.Hughes; M.Murtagh;
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正文语种 eng
中图分类无线电电子学、电信技术;
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2. Soft nitridation of GaAs(100) by hydrazine sulfide solutions: Effect on surface recombination and surface barrier [J] . V. L. Berkovits, D. Paget, A. N. Karpenko, Applied Physics Letters . 2007,第2期

机译：硫化肼溶液对GaAs（100）的软氮化：对表面重组和表面势垒的影响
3. Modification of GaAs(100) and GaN(0001) surfaces by treatment in alcoholic sulfide solutions [J] . Konenkova EV. Vacuum: Technology Applications & Ion Physics: The International Journal & Abstracting Service for Vacuum Science & Technology . 2002,第1期

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4. Anodic sulfidation and model characterisation of GaAs(100) in (NH{sub}4){sub}2S{sub}x solution [C] . R. F. Elbahnasawy, J. G. McInerney, P. Ryan, Symposium on compound semiconductor surface passivation and novel device processing . 1999

机译：GaAs（NH {Sub} 4）{sub} 2s {sub} x解决方案中GaAs（100）的阳极硫化和模型表征
5. Surface Chemistry and Interface Evolution during the Atomic Layer Deposition of High-k Metal Oxides on InAs(100) and GaAs(100) Surfaces. [D] . Henegar, Alex J. 2015

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Anodic sulfidation and model characterisation of GaAs (100) in (NH_4)_2S_x solution

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