首页> 外文会议>Symposium on Covalently Bonded Disordered Thin-Film Materials held December 2-4, 1997, Boston, Massachusetts, U.S.A. >Electron emission through tetrahedral amorphous carbon coatings on No and Si emitters
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Electron emission through tetrahedral amorphous carbon coatings on No and Si emitters

机译:通过No和Si发射体上的四面体非晶碳涂层进行电子发射

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摘要

The field emission properties of molybdenum and silicon emitter coated with tetrahedral amorphous carbon (or amorphous diamond) were studied. The tetrahedral amorphous carbon was deposited by laser ablation and showed a uniformly coated columnar structure over the entire emitter. In general, current conditioning improved stability and increased the current density. Coatings of ta-C on Mo emitters with and without nitrogen incorporated both yielded significantly higher emissivity than uncoated emitters. Nitrogen incorporation reduced the effective workfunction and the sp~3/sp~2 ratio. However similar depositions on Si emitters reduced the emissivity, and may be attributable to the residual oxide at the ta-C/Si interface. Annealing in a hydrogen atmosphere enhanced emissivity from both ta-C/Mo and ta-C/Si emitters. In general, thick coatings lowered the emissivity and the slope of the I-V curves. A temperature dependence of emission was observed only in the low field regions.
机译:研究了涂覆有四面体非晶碳(或非晶金刚石)的钼和硅发射极的场发射特性。通过激光烧蚀沉积四面体无定形碳,并在整个发射极上显示出均匀涂覆的柱状结构。通常,电流调节可提高稳定性并增加电流密度。含和不含氮的Mo发射极上的ta-C涂层均比未涂敷的发射极产生更高的发射率。氮掺入降低了有效功函数和sp〜3 / sp〜2比。但是,在Si发射极上的类似沉积会降低发射率,并且可能归因于ta-C / Si界面处的残留氧化物。在氢气气氛中进行退火可提高ta-C / Mo和ta-C / Si发射体的发射率。通常,厚涂层会降低发射率和I-V曲线的斜率。仅在低场区域中观察到发射的温度依赖性。

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