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Vt-Shift Compensating Amorphous Silicon Pixel Circuits for Flexible OLED Displays

机译:用于柔性OLED显示器的Vt位移补偿非晶硅像素电路

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摘要

In this paper, we present design considerations pertinent to amorphous silicon pixel circuits for mechanically flexible active matrix display applications. We describe both circuit topologies and pixel architectures that are amenable to surface emissive pixels in a-Si:H technology. Metastable shifts in the a-Si:H material characteristics after prolonged gate bias or mechanical stress are manifested in the form of increasing TFT threshold voltages and varying mobilities. As a result, the TFT drive current and consequently the OLED brightness decrease, and the pixel eventually turns off. The circuits presented here compensate for this decrease in current through the use of current programming and feedback, and allow for stable OLED brightness over longer time periods. They also enable the implementation of high aperture ratio (close to 100%), low leakage current, surface emissive OLED pixels. Results show that the circuits provide higher linearity and dynamic range than currently available pixel circuits while minimizing the pixel area. Charge injection effects at the gate of the drive TFT have been reduced by using smaller switching TFTs, along with circuit topologies that provide in-pixel current gain. All circuits meet the speed requirements of a QVGA 60 Hz refresh rate display, and occupy less than 300um x 300um area.
机译:在本文中,我们提出了与用于机械柔性有源矩阵显示应用的非晶硅像素电路有关的设计注意事项。我们描述了适合a-Si:H技术中表面发光像素的电路拓扑和像素架构。长时间的栅极偏置或机械应力后,a-Si:H材料特性的亚稳态转变表现为TFT阈值电压增加和迁移率变化。结果,TFT驱动电流并因此OLED亮度降低,并且像素最终关闭。此处介绍的电路通过使用电流编程和反馈来补偿电流的这种下降,并允许较长时间段内稳定的OLED亮度。它们还可以实现高开口率(接近100%),低泄漏电流,表面发射OLED像素。结果表明,与当前可用的像素电路相比,该电路可提供更高的线性度和动态范围,同时可将像素面积最小化。通过使用较小的开关TFT以及提供像素内电流增益的电路拓扑,已减小了驱动TFT栅极处的电荷注入效应。所有电路均满足QVGA 60 Hz刷新率显示屏的速度要求,并占用不到300um x 300um的面积。

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