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首页> 外文会议>Symposium on Electronics on Unconventional Substrates―Electrotextiles and Giant-Area Flexible Circuits Dec 2-3, 2002 Boston, Massachusetts, U.S.A. >Electroluminescent Textiles using Sputter-deposited Amorphous Nitride-Rare-Earth Ion Coatings
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Electroluminescent Textiles using Sputter-deposited Amorphous Nitride-Rare-Earth Ion Coatings

机译：使用溅射沉积的氮化物-稀土-稀土离子涂层的电致发光纺织品

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摘要

Wide bandgap semiconductors have been sputter deposited onto non-crystalline substrates, low melting point materials, including polymer fibers, textiles and glasses. The semiconductors are amorphous and can be deposited over large (square meter) areas economically. The electro-optical properties of these materials are not defect limited, and do not require thermal processing. Alternating current electroluminescent device structures/coatings composed of rare-earth ion doped nitrides have been deposited onto point-bonded fabrics, polymer membranes, and polymer sheets. Light emission is detected from the coated fabrics over the entire visible range, UV and IR. A notable feature of fabric-based structures is the inclusion of ambient air in the fabric voids. Increased light emission intensity is obtained by extracting electrons from the plasma discharge during device operation. These fabrics do not require weaving, which could be difficult with semi-crystalline or brittle semiconductor materials. Multilayer assembly and bonding with continuous sheets, cladding, filling and or contact bonding are all available at any point in the fabric assembly. Non-woven, pin-bonded, materials may still function after some damage, e.g. rips or punctures, due to redundant connections at each pad.
机译：宽带隙半导体已被溅射沉积在非晶态衬底，低熔点材料上，包括聚合物纤维，纺织品和玻璃。半导体是非晶态的，可以经济地沉积在大（平方米）的区域上。这些材料的电光性能不受缺陷限制，并且不需要热处理。由稀土离子掺杂的氮化物组成的交流电致发光器件结构/涂层已沉积在点粘结织物，聚合物膜和聚合物片材上。在整个可见范围（UV和IR）中检测到涂层织物的发光。基于织物的结构的显着特征是在织物空隙中包含环境空气。通过在设备运行期间从等离子体放电中提取电子来提高发光强度。这些织物不需要编织，这对于半结晶或脆性半导体材料而言可能是困难的。多层组件以及与连续片材的粘合，覆层，填充和/或接触粘合均可在织物组件的任何位置使用。无纺布，销钉粘合的材料可能会在某些损坏（例如损坏）后仍然起作用。由于每个打击垫上的多余连接而导致撕裂或刺破。

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