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首页> 外文会议>Symposium on Electronics on Unconventional Substrates―Electrotextiles and Giant-Area Flexible Circuits Dec 2-3, 2002 Boston, Massachusetts, U.S.A. >Capacitance-Voltage Characterization of Pulsed Plasma Polymerized Allylamine Dielectrics
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Capacitance-Voltage Characterization of Pulsed Plasma Polymerized Allylamine Dielectrics

机译：脉冲等离子体聚合烯丙胺电介质的电容-电压表征

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摘要

Polyallylamine films, deposited on Si wafers by radio frequency (RF) pulsed plasma polymerization (PPP), were employed as insulating layers of metal-insulator-semiconductor (MIS) capacitors. The insulating polymer films were deposited at substrate temperatures of 25℃ and 100℃. Multiple frequency capacitance-voltage (C-V) measurements indicated that an in-situ heat treatment during film deposition increased the insulator dielectric constant. The dielectric constant, calculated from the C-V data, rose from 3.03 for samples with no heat treatment to 3.55 for samples with an in-situ heat treatment. For both sample sets, the Ⅰ-Ⅴ data demonstrate a low leakage current value (<20fA) up to 100V with an area of 0.0307 mm~2, resulting in a current density of <0.65 pA/mm~2. Hysteresis in the C-V curves with differing sweep directions was more pronounced for in-situ heat-treated samples indicative of positive mobile ions.
机译：通过射频（RF）脉冲等离子体聚合（PPP）沉积在Si晶片上的聚烯丙胺薄膜被用作金属绝缘体半导体（MIS）电容器的绝缘层。绝缘聚合物膜在25℃和100℃的衬底温度下沉积。多频电容-电压（C-V）测量表明，膜沉积过程中的原位热处理提高了绝缘体的介电常数。根据C-V数据计算出的介电常数从未经热处理的样品的3.03上升到经过原位热处理的样品的3.55。对于这两个样本集，Ⅰ-Ⅴ数据均显示出高达100V的低漏电流值（<20fA），面积为0.0307 mm〜2，导致电流密度<0.65 pA / mm〜2。对于指示正移动离子的原位热处理样品，具有不同扫描方向的C-V曲线中的磁滞现象更为明显。

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