HIGH PERFORMANCE ORGANIC FIELD EFFECT TRANSISTOR WITH A NOVEL TOP-AND-BOTTOM CONTACT (TBC) STRUCTURE

机译：新型顶部和底部接触（TBC）结构的高性能有机场效应晶体管

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We studied the features of the newly developed Top and Bottom Contact Field Effect Transistor (TBCFET) with organic semiconductor layers. TBCFETs with ca.0.5 μm channel length (L) were fabricated and their transistor properties were measured. The output drain-source currents (I_(DS)) of TBCFET were 1 to 2 orders of magnitude higher than those of ordinary planar type FETs with 100pm channel length. On the other hand, because of the TBC structure, off current tends to become larger in the TBCFET. Therefore, in order to solve this off-current problem, we intentionally formed the Schottky junction at the top electrode/semiconductor interface. As a result, the off current became about 2 orders of magnitude smaller than before the formation of the Schottky junction.

机译：我们研究了新开发的带有有机半导体层的顶部和底部接触场效应晶体管（TBCFET）的特性。制作了具有大约0.5μm沟道长度（L）的TBCFET，并测量了它们的晶体管性能。 TBCFET的输出漏-源电流（I_（DS））比沟道长度为100pm的普通平面型FET高1-2个数量级。另一方面，由于TBC结构，在TBCFET中截止电流趋于变大。因此，为了解决该断流问题，我们有意在顶部电极/半导体界面处形成了肖特基结。结果，截止电流比肖特基结形成之前小了约两个数量级。

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《Symposium on Electronics on Unconventional Substrates―Electrotextiles and Giant-Area Flexible Circuits Dec 2-3, 2002 Boston, Massachusetts, U.S.A.》|2002年|p.213-218|共6页
会议地点 Boston MA(US);Boston MA(US)
作者
Manabu Yoshida; Sei Uemura; Satoshi Hoshino; Takehito Kodzasa; Satoshi Haraichi; Toshihide Kamata;
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作者单位

Photonics Research Institute, National Institute of Advanced Industrial Science and Technology, Central 5, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, JAPAN;

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正文语种 eng
中图分类一般工业技术;
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HIGH PERFORMANCE ORGANIC FIELD EFFECT TRANSISTOR WITH A NOVEL TOP-AND-BOTTOM CONTACT (TBC) STRUCTURE

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