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首页> 外文会议>Symposium on Epitaxial Oxide Thin Films III March 31-April 2, 1997, San Francisco, California,U.S.A >Epitaxial ferroelectric aurivillius-type phases on metallic oxides by pulsed laser deposition
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Epitaxial ferroelectric aurivillius-type phases on metallic oxides by pulsed laser deposition

机译：脉冲激光沉积在金属氧化物上的外延铁电金相型相

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摘要

Bi-based layered perovskites, also called Aurivillius-type phases, are superior to simple perovskite material with regard to their ferroelectric long-term stability. Another way to alleviate fatigue and aging problems in metal-ferroelectric-metal (MFM) heterostructures is to replace the bottom metallic electrode with a conductive oxide electrode. An attempt to combine the two approaches has bene made to investigate whether a further improvement in stability can be achieved. the promote an oriented growth of the ferroelectric films, epitaxial buffer layers (YSZ, CeO_2) and epitaxial electrodes of (La_0.5Sr_0.5) CoO_3 (LSC) have been consecutively deposited onto Si (100). Finally a ferroelectric thin film of the layered perovskite Bi_4Ti_3O_12 (BiT) has been grown. Rocking curve measurements demonstrate good epitaxial growth of both the buffer and the electrode layers. The ferroelectric thin films show a preferred c-axis orientation. Cross-section TEM images reveal a twinned superstructure in the LSC layer with a triplingof the lattice parameter. EDX line-scans show that a Co-enriched and Bi-depleted layer had formed at the BiT/LSC interface. After depositon of Au electrodes on both the BiT and the LSC layer, a hysteretic behavior could be detected and the ferroelectric properties of the c-oriented BiT film be confirmed.
机译：双基层状钙钛矿，也称为Aurivillius型相，在铁电长期稳定性方面优于简单钙钛矿材料。减轻金属铁电金属（MFM）异质结构中疲劳和老化问题的另一种方法是用导电氧化物电极代替底部金属电极。已经尝试将两种方法结合起来以研究是否可以进一步提高稳定性。为了促进铁电薄膜的定向生长，已在Si（100）上连续沉积了外延缓冲层（YSZ，CeO_2）和（La_0.5Sr_0.5）CoO_3（LSC）的外延电极。最后，已经生长出层状钙钛矿Bi_4Ti_3O_12（BiT）的铁电薄膜。摇摆曲线测量表明缓冲层和电极层均具有良好的外延生长。铁电薄膜显示出优选的c轴取向。横截面TEM图像显示LSC层中的孪生上层结构，晶格参数增加了三倍。 EDX线扫描表明，在BiT / LSC界面上已形成了一个富Co且Bi耗尽的层。在BiT​​和LSC层上都沉积Au电极后，可以检测到磁滞行为，并且可以确认c取向BiT膜的铁电性能。

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