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首页> 外文会议>Symposium on Epitaxial Oxide Thin Films III March 31-April 2, 1997, San Francisco, California,U.S.A >Intrinsic point defects on a TiO_2(110) surface and their reaction with oxygen: a scanning tunneling microscopy study
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Intrinsic point defects on a TiO_2(110) surface and their reaction with oxygen: a scanning tunneling microscopy study

机译：TiO_2（110）表面的本征点缺陷及其与氧的反应：扫描隧道显微镜研究

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摘要

The interaction of molecular oxygen, at room temperature, with a reduced TiO_2(110) surface has been studied in situ by scanning tunneling microscopy (STM). Oxygen vacancies (point defects) were created on a clean TiO_2(110) surface by annealing in ultra-high vacuum and successfully imaged on the atomic scale. These point defect sites were stable under ultrahigh vacuum conditions. During exposure to molecular oxygen,new point defects appear at different locations on the surface although their overall number is reduced. A mechanism for this dynamic healing process is proposed.
机译：通过扫描隧道显微镜（STM）原位研究了室温下分子氧与还原的TiO_2（110）表面的相互作用。通过在超高真空下退火，在干净的TiO_2（110）表面上产生了氧空位（点缺陷），并成功地在原子级上成像。这些点缺陷部位在超高真空条件下是稳定的。在接触分子氧的过程中，新点缺陷出现在表面的不同位置，尽管它们的总数减少了。提出了这种动态愈合过程的机制。

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