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首页> 外文会议>Symposium on Epitaxial Oxide Thin Films III March 31-April 2, 1997, San Francisco, California,U.S.A >In-situ caiciss study of dynamic process of oxygen desorption on Ti_O_2-terminated SrTiO_3(001) surface
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In-situ caiciss study of dynamic process of oxygen desorption on Ti_O_2-terminated SrTiO_3(001) surface

机译：Ti_O_2终止的SrTiO_3（001）表面氧解吸动态过程的原位凯西斯研究

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The topmost atoms of TiO_2 - terminated SrTiO_3(001) annealed at temperatures between room temperature and 800 deg in ultra high vacuum (UHV), have been studied by means of in-situ coaxial impact collision ion scattering spectroscopy (CAICISS). Both time-of-flight spectra at the incident angle of 45.0 deg along [100] azimuth and of 35.3 deg along [110] azimuth revealed Ti and weak O peaks and no Sr peak at 150 deg C, which means that the topmost layer at 150 deg C is teminated by TiO_2-plane, completely. On the other hand, as increasing the substrate temperature, Sr peak began to appear above 400 deg C. This Sr peak intensity from both directions was drastically increased with elevating the substrate temperature. This indicates that the topmost O and Ti atoms desorb from the surface at the higher substrate temperature.The ratio Sr/Ti corresponds to the amount of the topmost oxygen or titanium vacancies due to the desorption. It was found that 40
机译：TiO 2端接的SrTiO_3（001）的最上层原子在室温至800度之间的超高真空（UHV）中退火，已通过原位同轴碰撞碰撞离子散射光谱法（CAICISS）进行了研究。沿[100]方位角入射角为45.0度和[110]方位角入射角为35.3度的飞行时间谱都显示出Ti和弱O峰，而在150℃时没有Sr峰，这意味着最顶层位于TiO_2平面完全封闭了150℃。另一方面，随着基板温度的升高，在400℃以上开始出现Sr峰。随着基板温度的升高，来自两个方向的该Sr峰强度急剧增加。这表明最高的O和Ti原子在较高的衬底温度下从表面解吸.Sr / Ti比对应于由于解吸而产生的最顶部的氧或钛空位的数量。发现40

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