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首页> 外文会议>Symposium on Epitaxial Oxide Thin Films III March 31-April 2, 1997, San Francisco, California,U.S.A >Interplay between electronic transport and magnetic order in ferromagnetic manganite thin films
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Interplay between electronic transport and magnetic order in ferromagnetic manganite thin films

机译：铁磁锰矿薄膜中电子输运与磁序之间的相互作用

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摘要

The transition metal oxides La_1-xA_xMnO_3 (A=Ba,Ca,or Sr) order ferromagnetically with Curie temperatures ranging from as low as 50 K to well above room temperature. Magnetic order in these compounds resultsin a concomitant metal-insulator transition. The feature displayed by the manganites that is most important technologically is the extremely large negative magnetoresistance that achievesits largest values near the magnetic ordering temperature. Qualitatively, this colossal magnetoresistance (CMR) phebomenon involves the suppression of the relatively sharp maximum in the resistivity that is centered at T_c. When considered collectively, the anomalous temperature-dependent transport properties, the CMR effect, and the magneticaly ordered ground state indicate that a novel interplay between magnetism and electronic transport occurs in the manganites. General features of the magnetic-field and temperature-dependent electrical resistivity and magnetization as displayed by PLD-grown thin films are examined. Particular emphasis is placed on what these measurements tell us about the conduction process both above and below the magnetic ordering temperature.
机译：过渡金属氧化物La_1-xA_xMnO_3（A = Ba，Ca或Sr）在居里温度范围从低至50 K到远高于室温的条件下呈铁磁有序。这些化合物中的磁序导致伴随的金属-绝缘体转变。锰铁矿在技术上最重要的特征是极大的负磁阻，可在磁序温度附近达到最大值。定性地，这种巨大的磁阻（CMR）现象涉及对以T_c为中心的电阻率相对尖锐的最大值的抑制。当综合考虑时，异常的温度相关的输运性质，CMR效应和磁有序的基态表明在锰矿中发生了磁和电子输运之间的新型相互作用。检查了由PLD生长的薄膜显示的磁场和温度相关的电阻率和磁化强度的一般特征。这些测量特别说明了在磁有序温度以上和以下的传导过程。

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