The compound V_2O_3 undergoes a metal-insulator-transition (MIT) at T=150K with an optical gap in the insulating phase of approx 0.6eV. Therefore epitaxial films of V_2O_3 are of interest for infrared (IR) applications. We present the results of a systematic study of the growth conditions of such films utilizing electronic transport and infrared transmission measurements in addition to studies of crystal and microstructure.
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