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首页> 外文会议>Symposium on Filled and Nanocomposite Polymer Materials, Nov 27-30, 2000, Boston, Massachusetts, U.S.A. >Nanostructures from POSS-Grafted Block Copolymer Precursors
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Nanostructures from POSS-Grafted Block Copolymer Precursors

机译：POSS接枝嵌段共聚物前体的纳米结构

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摘要

A new method to prepare novel nanocomposites has been studied in which a polyhedral oligomeric silsesquioxane (POSS) monomer is grafted to a polyisoprene-block-polystyrene copolymer to yield an inorganic-organic hybrid copolymer (POSS-g-PI-block-PS). PS-block-PI copolymers (SI) were synthesized via anionic polymerization in tetrahydrofuran (THF) as solvent. The polyisoprene block of the SI diblock copolymers in this study featured a very high vinyl group fraction (65 mole % of 3,4-addition and 35 mole % of 1,2-addition) available to react with hydride-substituted POSS (isobutyldimethyl silane-POSS) to form a grafted block copolymer. Due to the immiscibility between POSS-grafted PI block and PS block, the grafted block copolymer developed a microdomain structure. The volume fraction of PS block in the grafted block copolymer was varied in the range of 0.45 to 0.37 in order to yield cylindrical PS microdomains in the matrix of POSS-grafted PI. After exposure to an oxygen plasma, it is expected that preferential erosion of the grafted block copolymer will occur for the organic potion (PS microdomains) thus leaving a well-defined nanoporous surface structure for nonlithographic functionalization of coated substrates.
机译：研究了一种制备新型纳米复合材料的新方法，其中将多面体低聚倍半硅氧烷（POSS）单体接枝到聚异戊二烯-嵌段-聚苯乙烯共聚物上，得到无机-有机杂化共聚物（POSS-g-PI-嵌段-PS）。在四氢呋喃（THF）中通过阴离子聚合反应合成PS-嵌段-PI共聚物（SI）。本研究中SI二嵌段共聚物的聚异戊二烯嵌段的特征在于可与氢化物取代的POSS（异丁基二甲基硅烷）反应的乙烯基比例很高（65％（摩尔）3,4-加成和35％（摩尔）1,2-加成） -POSS）以形成接枝的嵌段共聚物。由于POSS接枝的PI嵌段和PS嵌段之间的不相容性，接枝的嵌段共聚物形成了微区结构。接枝嵌段共聚物中PS嵌段的体积分数在0.45至0.37的范围内变化，以便在POSS接枝PI的基质中产生圆柱形PS微区。暴露于氧气等离子体后，预期有机部分（PS微区）会发生接枝嵌段共聚物的优先腐蚀，因此会为涂层基材的非光刻功能化留下明确定义的纳米孔表面结构。

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