Thisstudy has used secondary ion mass spectrometry (SIMS) as a technique for thin film EL material characterization. It has shown that the Cu dopant concentration in the SrS films directly correlates with the luminescent brightness of te EL devices. A series of SrS:Cu, Y were grown using MBE to study the Y co-doping effects. It has been found that Y peak concentration and areal density in the SrS increased as the Y evaporation cell temperature was increased. The maximum PL intensity was found in the sample grown in the middle of the Y cell temperature range used. The Y co-doping has shown to reduce the thermal quenching effects in SrS EL devices. Therefore, in this series of smaples, a good correlation has been found between Y and Cu concentration and the EL device performance characteristics.
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