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Exciton dissociation and mobility in conducting polymers and oligomers

机译:导电聚合物和低聚物中的激子解离和迁移率

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摘要

A survey of the lterature shows that reverse bias current I_L of an illuminated conducting polymer Schottky diode increases with voltage. We suggest that this increase in I_L with applied reverse bias is due to a combination of two factors: 91) increase of mobility, and (2) dissociation of exitions. The experimental results agree with the values of I_L calulated using either of the two mechanisms. Therefore it is difficult to determine the relative importance of the two mechanisms. The relative importance can be determined only if reliable values of material parameters are available. We have fabricated Schottky diodes and FETs using 5-ring n-octyloxy-substituted loigl[p-phenylene vinylene](Ooct-OPV5) and C_(60). SThe mobility of the oligomer derived from the measured characteristics of the diode is 3.29x10~(-7)cm~2/Vs and from the FET data, 3.24x10~(-4) cm~2/Vs. These results show that the mobility (and other material parameters) depend strongly on the structure of the device. Therefore for interpreting the I_L data it is important to measure the material parameters on the same structure on which I_L measurements are made.
机译:对文献的调查表明,照明的导电聚合物肖特基二极管的反向偏置电流I_L随着电压而增加。我们建议应用反向偏置的I_L的增加是由于以下两个因素的组合:91)迁移率增加,以及(2)出口解离。实验结果与使用两种机制之一计算的I_L值一致。因此,很难确定这两种机制的相对重要性。仅当可获得可靠的材料参数值时才能确定相对重要性。我们使用5环正辛氧基取代的loigl [对亚苯基亚乙烯基](Ooct-OPV5)和C_(60)制备了肖特基二极管和FET。 S由测得的二极管特性得出的低聚物的迁移率为3.29x10〜(-7)cm〜2 / Vs,而从FET数据得出的为3.24x10〜(-4)cm〜2 / Vs。这些结果表明,迁移率(和其他材料参数)在很大程度上取决于器件的结构。因此,为了解释I_L数据,重要的是在进行I_L测量的同一结构上测量材料参数。

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