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首页> 外文会议>Symposium on Growth, Evolution and Properties of Surfaces, Thin Films and Self-Organized Structures, Nov 27-Dec 1, 2000, Boston, Massachusetts, U.S.A. >ULTRA-THIN ZIRCONIUM SILICATE FILMS WITH GOOD PHYSICAL AND ELECTRICAL PROPERTIES FOR GATE DIELECTRIC APPLICATIONS
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ULTRA-THIN ZIRCONIUM SILICATE FILMS WITH GOOD PHYSICAL AND ELECTRICAL PROPERTIES FOR GATE DIELECTRIC APPLICATIONS

机译：具有良好物理和电学特性的超薄硅酸锆薄膜，用于栅极电介质

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摘要

The need for alternative gate dielectrics to replace conventional SiO_2 is increasing to facilitate further CMOS scaling. One of the most promising materials for use as an alternative gate dielectric is Zr silicate due to its thermodynamic stability on Si and its good interface quality with Si. In this study, ultra-thin Zr silicate films (45 - 60 A thick) with different Zr compositions have been deposited on Si using magnetron reactive co-sputtering. The Zr composition was kept below the stoichiometric value of about 16% to prevent precipitation of ZrO_2 and to have Si rich films for better interface quality. Films were rapid thermal annealed in N_2 ambient up to 900℃ and Pt was used as the gate electrode. Electrical characterization of these films was done using HP 4156 and HP 4194 parameter analyzers. Based on these studies, we demonstrate Zr silicate films with equivalent oxide thickness (EOT) of less than 14 A with gate leakage significantly lower than SiO_2 of similar thickness and hysteresis of < 20mV ( in a sweep from -3 to 3 V). The films exhibit good thermal stability on Si even after 900℃ annealing as shown by a minimal increase in EOT with annealing. TEM and XPS analyses show high quality Zr silicate films that remain stable and amorphous even at 900℃.
机译：对替代栅极电介质以代替常规SiO_2的需求正在增加，以促进进一步的CMOS缩放。用作替代栅极电介质的最有希望的材料之一是Zr硅酸盐，因为它对Si具有热力学稳定性，并且与Si的界面质量良好。在这项研究中，使用磁控反应共溅射在硅上沉积了具有不同Zr组成的超薄Zr硅酸盐薄膜（45-60 A厚）。为了防止ZrO_2析出并具有富含Si的薄膜以提高界面质量，Zr成分应保持在低于约16％的化学计量值以下。将膜在高达900℃的N_2环境中进行快速热退火，并使用Pt作为栅电极。这些薄膜的电特性使用HP 4156和HP 4194参数分析仪完成。基于这些研究，我们证明了等效氧化层厚度（EOT）小于14 A的Zr硅酸盐薄膜，栅极泄漏明显低于相似厚度和迟滞<20mV（在-3至3 V范围内）的SiO_2。薄膜即使在900℃退火后仍能在Si上表现出良好的热稳定性，这表明退火后EOT的增加极小。 TEM和XPS分析表明，高质量的Zr硅酸盐薄膜即使在900℃仍能保持稳定和非晶态。

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