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首页> 外文会议>Symposium on Growth, Evolution and Properties of Surfaces, Thin Films and Self-Organized Structures, Nov 27-Dec 1, 2000, Boston, Massachusetts, U.S.A. >Optical properties of self-organised SSMBE and GSMBE Ge nanostructures grown on SiGe template layers on Si (118)
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Optical properties of self-organised SSMBE and GSMBE Ge nanostructures grown on SiGe template layers on Si (118)

机译：在Si（118）的SiGe模板层上生长的自组织SSMBE和GSMBE Ge纳米结构的光学性质

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摘要

This work reports on the photo luminescence properties of self-organized fully strained Ge dots fabricated using two different growth techniques: gas source molecular beam epitaxy (GS-MBE) and solid source molecular beam epitaxy (SS-MBE). Variable temperature photoluminescence (PL) measurements were carried out on Si/(n)Ge/SiGe/Si structures (n varying from 1 to 7 monolayers) consisting in double layer structures (Ge(n)/Si_(1-x)Ge_x) deposited on (118) oriented Si substrates. The process used consists in realising in a first step a Si_(1-x)Ge_x template layer with a "self-patterned" morphology. Such patterning, based on periodic morphological modulation of the surface is used to confine and organise the Ge dots in a second deposition step. Similar series of experiments with various growth temperatures, Ge coverage levels and Si_(1-x)Ge_x concentrations (x) were done by both GS-MBE and SS-MBE. The PL from the 2D wetting layer in the case of n = 3 ML has been found to be more intense in GS-MBE thanks to the passivating role of the hydrogen atoms. The 2D to 3D growth transition is accompanied by the occurrence of a red-shifted broad PL band (L) attributed to the Ge dots. While broadened luminescence is obtained from dots directly deposited on the Si substrate, a narrower band is obtained from dots deposited on the template layer. Moreover the red-shift of the (L) band observed in the latter case is attributed to higher Ge concentration in the dots. On the other hand, there is no effect of the hydrogen on the formation of the islands which show similar optical and structural properties in both growth techniques. The main difference between GS-MBE and SS-MBE concerns a low energy shift in the PL of the SSMBE Ge dots we interpret as due to size, dispersion and Ge concentration or strain effects.
机译：这项工作报告了使用两种不同的生长技术制成的自组织完全应变Ge点的光致发光特性：气体源分子束外延（GS-MBE）和固体源分子束外延（SS-MBE）。在由双层结构（Ge（n）/ Si_（1-x）Ge_x）组成的Si /（n）Ge / SiGe / Si结构（n从1到7个单层变化）上进行了可变温度光致发光（PL）测量沉积在（118）取向的Si衬底上。所使用的过程包括在第一步中实现具有“自构图”形态的Si_（1-x）Ge_x模板层。基于表面的周期性形态调制的这种图案化在第二沉积步骤中用于限制和组织Ge点。通过GS-MBE和SS-MBE进行了一系列不同的生长温度，Ge覆盖水平和Si_（1-x）Ge_x浓度（x）的类似系列实验。在n = 3 ML的情况下，由于氢原子的钝化作用，已发现2D润湿层中的PL在GS-MBE中更为强烈。 2D到3D的生长过渡伴随着归因于Ge点的红移宽PL带（L）的出现。从直接沉积在Si衬底上的点获得宽的发光，而从沉积在模板层上的点获得较窄的带。此外，在后一种情况下观察到的（L）带的红移归因于点中较高的Ge浓度。另一方面，氢对岛的形成没有影响，在两种生长技术中，岛均显示出相似的光学和结构性质。 GS-MBE和SS-MBE之间的主要区别在于，我们将SSMBE Ge点的PL中的能量偏移降低，我们认为这是由于尺寸，色散和Ge浓度或应变效应所致。

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