Oblique Stacking of Three-Dimensional Dome Islands in Ge/Si Multilayers

机译：Ge / Si多层膜中三维圆顶岛的倾斜堆叠

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The organization of Ge 'dome' islands in Ge/Si multilayers has been investigated by cross-sectional transmission electron microscopy. Ge 'domes' are found to spontaneously arrange in oblique stacks, replicating at a well-defined angle from one bilayer to the next. The formation of oblique island stacks is governed by a complex interplay of surface strain - generated by the already buried islands - and surface curvature - caused by the inherent tendency of large 'domes' to carve out material from the surrounding planar substrate.

机译：已经通过截面透射电子显微镜研究了Ge / Si多层中的Ge“圆顶”岛的组织。发现Ge“圆顶”自发地排列成倾斜的堆叠，从一个双层到另一个双层以明确的角度复制。倾斜岛堆的形成受表面应变（由已经掩埋的岛所产生）和表面曲率（由大的“圆顶”从周围的平面基板中切出材料的固有趋势）造成的复杂相互作用所控制。

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《Symposium on Growth, Evolution and Properties of Surfaces, Thin Films and Self-Organized Structures, Nov 27-Dec 1, 2000, Boston, Massachusetts, U.S.A.》|2000年|p.8.4.1-8.4.6|共6页
会议地点 Boston MA(US);Boston MA(US)
作者
P. Sutter; E. Sutter (Mateeva); L. Vescan;
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作者单位

Department of Physics, Colorado School of Mines, Golden, CO 80401, USA;

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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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Oblique Stacking of Three-Dimensional Dome Islands in Ge/Si Multilayers

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