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首页> 外文会议>Symposium on Growth, Evolution and Properties of Surfaces, Thin Films and Self-Organized Structures, Nov 27-Dec 1, 2000, Boston, Massachusetts, U.S.A. >In Situ Observation of Instability in Step Morphology during Epitaxy and Erosion
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In Situ Observation of Instability in Step Morphology during Epitaxy and Erosion

机译：外延和侵蚀过程中台阶形态的不稳定性原位观察

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摘要

Instability in the morphology of atomic steps is predicted for certain growth conditions. To test and extend this prediction, various atomic step geometries were prepared on ultra-flat Si(l 11) substrates. Atomic steps were observed using an in situ scanning electron microscope. For specific growth conditions and certain step arrangements, unstable growth was observed. The stability of step flow growth depends, in part, on the flux arriving at the surface. In contrast to the theoretical prediction, in this more general situation, the same type of instability can also be observed in sublimation. For both growth and sublimation, the terrace widths adjacent to a step determine whether that step will undergo stable or unstable step flow. The mechanism by which the step spacing controls the morphology is described. Although only the Si(l 11) surface was observed, it is predicted that the same step instability should be present on many surfaces.
机译：对于某些生长条件，可以预测原子台阶形态的不稳定性。为了测试和扩展此预测，在超平整的Si（11）基板上制备了各种原子台阶几何形状。使用原位扫描电子显微镜观察原子步骤。对于特定的生长条件和某些步骤安排，观察到不稳定的生长。逐步流动增长的稳定性部分取决于到达表面的通量。与理论预测相反，在这种更普遍的情况下，在升华中也可以观察到相同类型的不稳定性。对于生长和升华，与台阶相邻的阶地宽度决定了该台阶将经历稳定还是不稳定的台阶流动。描述了步距控制形态的机制。尽管仅观察到Si（11）表面，但可以预料，许多表面上都应存在相同的台阶不稳定性。

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