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GROWTH FRONT ROUGHENING OF ROOM TEMPERATURE DEPOSITED OLIGOMER THIN FILMS

机译:室温沉积低聚物薄膜的生长前粗加工

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摘要

Growth front scaling aspects are investigated for PPV-type oligomer thin films vapor-deposited onto silicon substrates at room temperature. For film thickness d~15-300 nm, commonly used in optoelectronic devices, correlation function measurement by atomic force microscopy yields roughness exponents in the range H=0.45+-0.04, and an rms roughness amplitude which evolves with film thickness as a power law σ∝ d~β with β=0.28+-0.05. The non-Gaussian height distribution and the measured scaling exponents (H and β) suggest a roughening mechanism close to that described by the Kardar-Parisi-Zhang scenario.
机译:研究了室温下气相沉积在硅基板上的PPV型低聚物薄膜的生长前沿缩放方面。对于光电器件中常用的d〜15-300 nm的膜厚,通过原子力显微镜进行的相关函数测量得出的粗糙度指数在H = 0.45 + -0.04范围内,并且均方根粗糙度幅值随膜厚度作为幂定律而变化σ∝ d〜β,β= 0.28 + -0.05。非高斯高度分布和测得的比例指数(H和β)表明粗糙化机制与Kardar-Parisi-Zhang情景所描述的近似。

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