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首页> 外文会议>Symposium on Growth, Evolution and Properties of Surfaces, Thin Films and Self-Organized Structures, Nov 27-Dec 1, 2000, Boston, Massachusetts, U.S.A. >Ultrafast Magnetization Reversal Dynamics on A Micrometer-Scale Thin Film Element Studied by Time Domain Imaging
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Ultrafast Magnetization Reversal Dynamics on A Micrometer-Scale Thin Film Element Studied by Time Domain Imaging

机译：时域成像研究微米级薄膜元件上的超快磁化反转动力学

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摘要

Picosecond time scale magnetization reversal dynamics in a I5nm thick Ni_(80)Fe_(20) microstructure (10μmX2μm) is studied using time-resolved scanning Kerr microscopy. The time domain images reveal a striking change in the magnetization reversal mode, associated with the dramatic reduction in switching time when the magnetization vector is pulsed by a longitudinal switching field while a steady transverse biasing field is applied to the sample. According to the time domain imaging results, the abrupt change of the switching time is due to the change in the magnetization reversal mode; i.e., the nucleation dominant reversal process is replaced by domain wall motion if transverse biasing field is applied. Furthermore, magnetization oscillations subsequent to reversal are observed at two distinct resonance frequencies, which sensitively depend on the biasing field strength. The high frequency resonance at f=2 GHz is caused by damped precession of the magnetization vector, whereas another mode at f≈0.8 GHz is observed to arise from domain wall oscillation.
机译：使用时间分辨扫描Kerr显微镜研究了I5nm厚Ni_（80）Fe_（20）微观结构（10μmX2μm）中皮秒级的磁化反转动力学。时域图像揭示了磁化反转模式的惊人变化，这与在纵向磁场施加稳定的横向偏置磁场的同时，通过纵向切换磁场对磁化矢量进行脉冲化时，切换时间显着减少有关。根据时域成像结果，切换时间的突然变化是由于磁化反转模式的变化而引起的。即，如果施加横向偏置场，则成核占主导地位的逆转过程被畴壁运动所代替。此外，在两个不同的共振频率处观察到了反转之后的磁化振荡，这两个共振频率敏感地取决于偏置场强。 f = 2 GHz时的高频谐振是由磁化矢量的阻尼进动引起的，而在f≈0.8GHz时的另一种模式则是由畴壁振荡引起的。

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