Effect Of Grain Size, Morphology and Deposition Temperature on Cu(InGa)Se_2 Solar Cells

机译：晶粒尺寸，形貌和沉积温度对Cu（InGa）Se_2太阳能电池的影响

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Cu(InGa)Se_2 films have been deposited by multisource elemental evaporation at substrate temperatures from 550 to 400℃ to determine the effect of temperature on grain size and morphology and on solar cell performance. Films were deposited with different flux profiles to compare cases where a copper selenide phase is formed during different stages of growth or not at all. The grain size and surface area of the films are determined by analysis of atomic force microscope images. With the Cu-rich growth, the mean lateral grain area decreases from 1.8 to 0.3 μm~2 as substrate temperature decreases. Device efficiency decreases with the lower temperature but cannot be simply attributed to changes in grain size, surface area, or the availability of sodium which diffused from the glass substrate. Instead the decrease in open circuit voltage and fill factor are attributed to a greater density of intra-grain trap states in the Cu(InGa)Se_2.

机译：Cu（InGa）Se_2薄膜通过多源元素蒸发在550至400℃的衬底温度下沉积，以确定温度对晶粒尺寸和形貌以及对太阳能电池性能的影响。以不同的通量分布沉积薄膜，以比较在不同生长阶段或根本不形成硒化铜相的情况。通过原子力显微镜图像的分析来确定膜的晶粒尺寸和表面积。随着富Cu的生长，随着衬底温度的降低，平均横向晶粒面积从1.8减少至0.3μm〜2。器件效率随着温度的降低而降低，但不能简单地归因于晶粒尺寸，表面积的变化或从玻璃基板中扩散出来的钠的可用性。取而代之的是，开路电压和填充因子的降低归因于Cu（InGa）Se_2中晶粒内陷阱态的密度更大。

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《Symposium on II-VI Compound Semiconductor Photovoltaic Materials, Apr 16-20, 2001, San Francisco, California》|2001年|p.H2.3.1-3.6|共6页
会议地点 San Francisco CA(US);San Francisco CA(US)
作者
William N. Shafarman; Jie Zhu;
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作者单位

Institute of Energy Conversion University of Delaware Newark, DE 19716, USA;

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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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Effect Of Grain Size, Morphology and Deposition Temperature on Cu(InGa)Se_2 Solar Cells

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