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首页> 外文会议>Symposium on Materials and Devices for Optoelectronics and Microphotonics, Apr 1-5, 2002, San Francisco, California >Characteristics of GaN/Si(lll) Epitaxy Grown using Al_0.1Ga0.9N/AIN Composite Nucleation Layers having Different Thicknesses of AIN
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Characteristics of GaN/Si(lll) Epitaxy Grown using Al_0.1Ga0.9N/AIN Composite Nucleation Layers having Different Thicknesses of AIN

机译：使用具有不同厚度的AIN的Al_0.1Ga0.9N / AIN复合成核层生长的GaN / Si（III）外延特性

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We have studied the effects of A1_0.1Ga_0.9N(150 nm)/AIN Composite Nucleation Layers (CNLs) having different thicknesses of AIN ranging from 20 to 41 nm on the growth characteristics of GaN/Si(111) epitaxy. The surface morphologies of the GaN epitaxial layers which were grown on Al_0.1Ga_0.9N(150nm)/AIN CNLs showed that the number of thermal etch pits and cracks was abruptly decreased with the increase of AIN thickness from 20 to 35 nm. However, the morphology of GaN epitaxy which was grown on Al_0.1Ga_0.9N(150 nm)/AIN CNL having AIN of 41 nm thick above 35 nm showed that the number of them was increased again. So, the GaN/Si(111) epitaxy which was grown using Al_0.1Ga_0.9N(150 nm)/AlN(35 nm) CNL showed the highest crystallinity having the FWHM of 1157 arcsec for the (0002) diffraction. Photoluminescence spectrum at room temperature for GaN/Si(111) epitaxy grown using Al_0.1Ga_0.9N( 150 nm)/AIN(35 nm) CNL showed a sharp band edge emission at 364 nm, which especially doesn't have yellow luminescence related to various defects such as vacancy and dislocation. Meanwhile, the spectra at room temperature for the others showed yellow luminescence at around 580 nm except each band edge emission. Moreover, the FWHM of main exitonic peak at 10 K for the GaN/Si(111) epitaxy which was grown using Al_0.1Ga_0.9N(150 nm)/AlN(35 nm) CNL is the lowest value of 12.81 meV among them. It is obvious that the Al_0.1Ga_0.9N(150 nm)/AIN CNL having suitable thickness of AIN plays an important role in improving the crystallinity and optical properties of GaN/Si(111) heteroepitaxy without any defects such as pits and cracks over the surface by reducing the mismatch of thermal expansioncoefficient and lattice constant between GaN and Si(111) comparing with Al_xGa_(1-x)N or AIN nucleation layer alone.
机译：我们研究了AlN_0.1Ga_0.9N（150 nm）/ AlN复合成核层（CNLs），其AlN厚度从20到41 nm不等，对GaN / Si（111）外延生长特性的影响。在Al_0.1Ga_0.9N（150nm）/ AIN CNLs上生长的GaN外延层的表面形貌表明，随着AIN厚度从20 nm增加到35 nm，热刻蚀坑和裂纹的数量急剧减少。然而，在具有大于35nm的41nm厚的AlN的Al_0.1Ga_0.9N（150nm）/ AlN CNL上生长的GaN外延的形态表明它们的数量再次增加。因此，使用Al_0.1Ga_0.9N（150 nm）/ AlN（35 nm）CNL生长的GaN / Si（111）外延显示出最高的结晶度，对于（0002）衍射，FWHM为1157 arcsec。使用Al_0.1Ga_0.9N（150 nm）/ AIN（35 nm）CNL生长的GaN / Si（111）外延在室温下的光致发光光谱在364 nm处显示出尖锐的能带边缘发射，特别是与黄色发光无关空位和错位等各种缺陷。同时，其他的在室温下的光谱除了每个带边缘发射之外，在580nm附近显示出黄色发光。此外，其中使用Al_0.1Ga_0.9N（150 nm）/ AlN（35 nm）CNL生长的GaN / Si（111）外延生长在10 K时的主要主离子峰的FWHM是其中最低的12.81 meV。显然，具有合适厚度的AIN的Al_0.1Ga_0.9N（150 nm）/ AIN CNL在改善GaN / Si（111）异质外延性的结晶度和光学性能方面起着重要作用，而不会出现诸如凹坑和裂纹的缺陷。与单独的Al_xGa_（1-x）N或AIN成核层相比，通过减少GaN和Si（111）之间的热膨胀系数和晶格常数的不匹配，可以使表面更光滑。

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