首页> 外文会议>Symposium on Materials and Devices for Optoelectronics and Microphotonics, Apr 1-5, 2002, San Francisco, California >Nonlinear optical properties of plasma enhanced chemical vapour deposition grown silicon nanocrystals
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Nonlinear optical properties of plasma enhanced chemical vapour deposition grown silicon nanocrystals

机译:等离子体增强化学气相沉积生长的硅纳米晶体的非线性光学性质

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We present a systematic study on the nonlinear optical properties of silicon nanocrystals (Si-nc) grown by plasma enhanced chemical vapour deposition (PECVD). The sign and magnitude of both real and imaginary parts of third-order nonlinear susceptibility X~((3)) of Si-nc are measured by Z-scan method. While the closed aperture Z-scan reveals a sign of positive nonlinearity, the open aperture measurements suggests a nonlinear absorption coefficients. Absolute values of x~((3)) are in the order of 10~(-9) esu and show systematic correlation with the Si-nc size, due to quantum confinement related effects.
机译:我们目前对通过等离子体增强化学气相沉积(PECVD)生长的硅纳米晶体(Si-nc)的非线性光学性质进行系统研究。用Z扫描法测量了Si-nc的三阶非线性磁化率X〜((3))的实部和虚部的符号和大小。闭孔Z扫描显示出正非线性迹象,而开孔测量表明存在非线性吸收系数。由于量子限制相关效应,x〜((3))的绝对值约为10〜(-9)esu,并且与Si-nc尺寸显示出系统相关性。

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