A Chemical Perspective of GaN Polarity: The use of Hydrogen Plasma Dry Etching Versus NaOH Wet Etching to Determine Polarity

机译：GaN极性的化学观点：使用氢等离子体干蚀刻与NaOH湿蚀刻来确定极性

获取原文

获取原文并翻译 | 示例

页面导航

摘要
著录项
相似文献
相关主题

摘要

The use of dry hydrogen plasma etching is evaluated for determination of GaN polarity and critically compared to wet etching in NaOH. It is shown that hydrogen plasma etching is effective in revealing inversion domains (IDs) and some types of dislocations. This is because the surface morphology is unchanged by the hydrogen treatment, and, hence, the surface reactivity is not masked.

机译：评估了使用干法氢等离子体刻蚀确定GaN极性的方法，并将其与NaOH中的湿法刻蚀进行了严格比较。结果表明，氢等离子体刻蚀可以有效地揭示反型畴（IDs）和某些类型的位错。这是因为通过氢处理，表面形态没有变化，因此表面反应性未被掩盖。

著录项

来源
《Symposium on Materials and Devices for Optoelectronics and Microphotonics, Apr 1-5, 2002, San Francisco, California》|2002年|p.103-108|共6页
会议地点 San Francisco CA(US);San Francisco CA(US)
作者
Maria Losurdo; MariaMichela Giangregorio; Pio Capezzuto; Giovanni Bruno; Gon Namkoong; W. Alan Doolittle; April S. Brown;
展开▼
作者单位

Institute of Inorganic Metodologies and Plasmas -CNR, sect, of Bari via Orabona, 4- 70126 Bari, Italy;

展开▼
会议组织
原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
关键词

相似文献

外文文献
中文文献
专利

1. Fabrication of GaN-based ridge waveguides with very smooth and vertical sidewalls by combined plasma dry etching and wet chemical etching [J] . Wanyong Li, Yi Luo, Bing Xiong, Physica status solidi . 2015,第10期

机译：通过等离子干法刻蚀和湿法化学刻蚀相结合的方法制造具有非常光滑和垂直侧壁的GaN基脊形波导
2. Fabrication of GaN-based striped structures along the < 1120 > direction by the combination of RIE dry-etching and KOH wet-etching techniques to recover dry-etching damage [J] . Morimichi Itoh, Toru Kinoshita, Koji Kawasaki, Physica Status Solidi. C, Conferences and critical reviews . 2006,第6期

机译：通过RIE干蚀刻和KOH湿蚀刻技术结合沿<1120>方向制造GaN基条纹结构，以恢复干蚀刻损伤
3. Polarity-inverted lateral overgrowth and selective wet-etching and regrowth (PILOSWER) of GaN [J] . Dongsoo Jang, Miyeon Jue, Donghoi Kim, Scientific reports. . 2018,第1期

机译：极性 - 倒的横向过度栽培和选择性湿法蚀刻和再生（Piloswer）的GaN
4. A Chemical Perspective of GaN Polarity:The use of Hydrogen Plasma Dry Etching Versus NaOH Wet Etching to Determine Polarity [C] . Maria Losurdo, MariaMichela Giangregorio, Pio Capezzuto, Materials Research Society Symposium . 2002

机译：GaN极性的化学视角：使用氢等离子体干蚀刻与NaOH湿法蚀刻以确定极性
5. Optimization of Dry and Wet GaN Etching to Form High Aspect Ratio Nanowires [D] . Hartensveld, Matthew. 2018

机译：干湿GaN蚀刻优化形成高纵横比纳米线
6. Polarity-inverted lateral overgrowth and selective wet-etching and regrowth (PILOSWER) of GaN [O] . Dongsoo Jang, Miyeon Jue, Donghoi Kim, -1

机译：GaN的极性反转横向过生长和选择性湿法蚀刻和再生长（PILOSWER）
7. Investigation of defects and surface polarity in AlN and GaN using wet chemical etching technique [O] . Yoon Pyo Hong, Jae Hwa Park, Cheol Woo Park, 2014

机译：湿化学蚀刻技术研究AlN和GaN中的缺陷和表面极性
8. Investigation of Defects and Surface Polarity in GaN Using Hot Wet Etching Together with Microscopy and Diffraction Techniques [R] . Visconti, P., Huang, D., Reschikov, M. A. 2002

机译：用热湿蚀刻结合显微镜和衍射技术研究GaN的缺陷和表面极性

A Chemical Perspective of GaN Polarity: The use of Hydrogen Plasma Dry Etching Versus NaOH Wet Etching to Determine Polarity

摘要

著录项

相似文献

相关主题

期刊订阅