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首页> 外文会议>Symposium on Materials and Devices for Optoelectronics and Microphotonics, Apr 1-5, 2002, San Francisco, California >Large-area porous alumina photonic crystals via imprint method
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Large-area porous alumina photonic crystals via imprint method

机译：压印法制备大面积多孔氧化铝光子晶体

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摘要

A perfect 2D porous alumina photonic crystal with 500 nm interpore distance was fabricated on an area of 4 cm~2 via imprint methods and subsequent electrochemical anodization. A 4" imprint stamp consisting of a convex pyramid array was obtained by modern VLSI processing using DUV-lithography, anisotropic etching, LPCVD Si_3N_4 deposition and wafer bonding. The optical properties of the porous alumina photonic crystal were measured with an infrared microscope in Γ-M direction. For both polarizations, a bandgap is observed at around 1 um for r/a = 0.42. A reflectivity of almost unity for E-polarization in the region of the bandgap is a sign of the high quality of the structure, indicating almost no scattering losses. These experimental results could be correlated very well to the bandstructure as well as reflectivity calculations assuming a dielectric constant of e = 2.0 for the anodized alumina.
机译：通过压印方法和随后的电化学阳极氧化，在4 cm〜2的面积上制得了孔距为500 nm的完美二维多孔氧化铝光子晶体。通过采用DUV光刻，各向异性蚀刻，LPCVD Si_3N_4沉积和晶片键合的现代VLSI工艺，获得了由凸棱锥阵列组成的4“压印模。在Γ-中使用红外显微镜测量了多孔氧化铝光子晶体的光学性质。 M方向：对于两种偏振，在r / a = 0.42时都在1 um处观察到带隙。在带隙区域中E偏振的反射率几乎统一，这是结构高质量的标志，表明几乎假设阳极氧化铝的介电常数为e = 2.0，则这些实验结果与能带结构以及反射率计算可以很好地相关。

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