• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>Symposium on Microcrystalline and Nanocrystalline Semiconductors-1998 held November 30-December 3, 1998, Boston, Massachusetts, U.S.A. >Modification of visible light emission from silicon nanocrystals as a function of size, electronic structure, and surface passivation
【24h】

Modification of visible light emission from silicon nanocrystals as a function of size, electronic structure, and surface passivation

机译：硅纳米晶体可见光发射随尺寸，电子结构和表面钝化的变化

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

The effect of surface passivation and crystallite size on the photoluminescence of porous silicon is reported. Oxygen-free porous silicon samples with medium to ultra high porosities have been prepared by using electrochemical etching followed by photoassisted stain etching. As long as the samples were hydrogen-passivated the PL could be tuned from the red (750nm) to the blue (400nm) by increasing the porosity. We show that when surface oxidation occurred, the photoluminescence was red-shifted. For sizes smaller than 2.8nm, the red shift can be as large as leV but for larger sizes no shift has been observed. Comparing the experimental results with theoretical calculations, we suggest that the decrease in PL energy upon exposure to oxygen is related to recombination involving an electron or an exciton trapped in Si=O double bonds. This result clarifies the recombination mechanisms in porous silicon.
机译：报道了表面钝化和微晶尺寸对多孔硅的光致发光的影响。通过使用电化学蚀刻，然后进行光辅助污渍蚀刻，可以制备出中等至超高孔隙率的无氧多孔硅样品。只要样品经过氢钝化，就可以通过增加孔隙率将PL从红色（750nm）调整为蓝色（400nm）。我们表明当发生表面氧化时，光致发光被红移。对于小于2.8nm的尺寸，红移可以与leV一样大，但是对于较大的尺寸，则没有观察到移位。将实验结果与理论计算进行比较，我们认为，暴露于氧气后PL能量的下降与电子或激子中Si = O双键中所包含的重组有关。该结果阐明了多孔硅中的复合机理。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号