Low temperature ecr - plasma assisted mocvd microcrystalline and amorphous GaN deposition and characterization for electronic devices

机译：低温ecr-等离子体辅助的mocvd微晶和非晶GaN沉积和表征电子设备

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GaN films have been deposited over a range of temperatures from 50 C to 650 C by ECR plasma MOCVD on silicon (111) and (100), sapphire and quartz using triethylgallium and molecular nitrogen or ammonia as reagents. Growth rates of 2 um/hr are achieved on temperature-controlled substrates (total reactor pressure 0.5 mTorr, 250 watts at 2.45 GHz).

机译：使用三乙基镓和分子氮或氨作为试剂，通过ECR等离子体MOCVD在50（C）至650（C）的温度范围内，将GaN膜沉积在硅（111）和（100），蓝宝石和石英上。在可控温度的基板上达到2 um / hr的生长速率（反应堆总压力为0.5 mTorr，在2.45 GHz下为250瓦）。

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《Symposium on Microcrystalline and Nanocrystalline Semiconductors-1998 held November 30-December 3, 1998, Boston, Massachusetts, U.S.A.》|1998年|p.245-250|共6页
会议地点 Boston MA(US)
作者
Z. Hassan; M.E.Kordesch; W.M. Jadwisienzak; H.J.Lozykowski; W. Halverson; P.C. Colter;
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正文语种 eng
中图分类无线电电子学、电信技术;
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4. Low temperature ecr - plasma assisted mocvd microcrystalline and amorphous GaN deposition and characterization for electronic devices [C] . Z. Hassan, M.E.Kordesch, W.M. Jadwisienzak, Symposium on microcrystalline and nanocrystalline semiconductors . 1999

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Low temperature ecr - plasma assisted mocvd microcrystalline and amorphous GaN deposition and characterization for electronic devices

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