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首页> 外文会议>Symposium on Microcrystalline and Nanocrystalline Semiconductors-1998 held November 30-December 3, 1998, Boston, Massachusetts, U.S.A. >Light induced esr measurements on microcrystalline silicon with different crystalline volume fractions
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Light induced esr measurements on microcrystalline silicon with different crystalline volume fractions

机译：在具有不同晶体体积分数的微晶硅上进行光致ESR测量

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摘要

Microcrystalline silicon with various crystalline volume fractions was prepared by plasma enhanced chemical vapour deposition. The material was studied by steady state and transient electron spin resonance in the dark and under light illumination. The observed resonances at g-values of 2.01, 2.0052, 2.0043, 1.998 can be attributed to the amorphous and microcrystalline constituents, and their respective intensities change as the ratio of amorphous to crystalline volume is varied. The origin of a fifth resonance at g=1.995 remains unclear. Smaller crystalline volume fractons lead to lower spin densities and affect the recombination behaviour of photogenerated charge carriers. The recombination behaviour in highly crystalline material is also influenced by moderate Fermi level shifts, where differences show up between n-type (or undoped) and p-type samples. The differences are atrributed to trapping of photo-generated holes in deep states within the disordered regions.
机译：通过等离子体增强化学气相沉积制备具有各种晶体体积分数的微晶硅。通过在黑暗和光照下的稳态和瞬态电子自旋共振研究了该材料。在2.0、2.0052、2.0043、1.998的g值处观察到的共振可归因于非晶和微晶成分，并且它们各自的强度随着非晶与晶体体积之比的变化而变化。尚不清楚在g = 1.995处的第五次共振的起源。较小的晶体体积分数导致较低的自旋密度，并影响光生电荷载流子的重组行为。高结晶度材料中的重组行为也受到中等费米能级移动的影响，其中n型（或未掺杂）和p型样品之间会出现差异。差异归因于在无序区域内以深状态捕获光生空穴。

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