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首页> 外文会议>Symposium on Microcrystalline and Nanocrystalline Semiconductors-1998 held November 30-December 3, 1998, Boston, Massachusetts, U.S.A. >Light emitting micropatterns of porous semiconductors
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Light emitting micropatterns of porous semiconductors

机译：多孔半导体的发光微图案

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摘要

We report a principle that allows writing visible light emitting semiconductor patterns of arbitrary shape down to the sub-micrometer scale. We demonstrate that porous semiconductor growth can be electrochemically initiated preferentially at surface defects created in an n-type substrate by Si~(++) focused ion beam bombardment. For n-type material in the dark, the electrochemical pore for-mation potential (Schottky barrier breakdown voltage) is significantly lower at the implanted locations than for an unimplanted surface. This difference in the threshold voltages is exploited to achieve the selectivity of the pore formation process. Visible light emitting patterns of porous Si and GaAs have been created in this way. At present, the size of the structures is limited only by the diameter of the writing ion beam, and pattern diameters in the 50-200-nm range are possible.
机译：我们报告了一种原理，该原理允许将任意形状的可见光发射半导体图案写入亚微米级。我们证明，多孔半导体生长可以优先通过Si〜（++）聚焦离子束轰击在n型衬底中产生的表面缺陷处电化学引发。对于在黑暗中的n型材料，在植入位置处的电化学孔隙形成电势（肖特基势垒击穿电压）显着低于未植入表面。利用阈值电压的这种差异来实现孔形成过程的选择性。以此方式已经形成了多孔Si和GaAs的可见光发射图案。目前，结构的尺寸仅受写入离子束的直径的限制，并且图案直径可以在50-200nm范围内。

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