Local structure and Er~(3+) emission from pseudo-amorphous GaN: Er thin films

机译：准非晶GaN：Er薄膜的局部结构和Er〜（3+）发射

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We report on strong Er~(3+) luminescence in the visible and infra-red regions at room temperature in amorphous GaN:Er thin films prepared by DC magnetron co-sputtering. The intensity of the Er~(3+) luminescence at 1.535 #mu#m corresponding to ~4I_(13/2) -> ~4I_(15/2) transitions is greatly enhanced after annealing at 750 deg C. In this material GaN crystallites have formed and embedded in the continuous amorphous matrix. The crystallites are 4 to 7 nm in diameter as analyzed by high resolution transmission electron microscopy. The absorption edge, extending three orders of magnitude in absorption coefficient in the spectral range from 0.5 to 3.5 eV, is superimposed on resonant absorption bands of Er~(3+) ions. The total photoluminescence spectrum consists of well-defined Er~(3+) luminescence peaks imposed on a broad band edge luminescence from the amorphous GaN host matrix.

机译：我们报道了通过直流磁控管共溅射制备的非晶GaN：Er薄膜在室温下在可见光和红外区域具有较强的Er〜（3+）发光。在750℃退火后，对应于〜4I_（13/2）->〜4I_（15/2）跃迁的1.535＃mu＃m处Er〜（3+）发光的强度大大增强。在这种材料中，GaN微晶已经形成并嵌入连续的无定形基体中。通过高分辨率透射电子显微镜分析，微晶的直径为4至7nm。在Er〜（3+）离子的共振吸收带上，吸收边缘在0.5到3.5 eV的光谱范围内扩展了三个数量级的吸收系数。总的光致发光光谱由明确定义的Er〜（3+）发光峰组成，这些峰施加于来自非晶GaN基质的宽带边缘发光。

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《Symposium on Microcrystalline and Nanocrystalline Semiconductors-1998 held November 30-December 3, 1998, Boston, Massachusetts, U.S.A.》|1998年|p.81-86|共6页
会议地点 Boston MA(US)
作者
S.B.Aldabergenova; M.Albrecht; A.A.Andreev; C.Inglefield; J.Viner; P.C.Taylor; H.P.Strunk;
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中图分类无线电电子学、电信技术;
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Local structure and Er~(3+) emission from pseudo-amorphous GaN: Er thin films

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