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首页> 外文会议>Symposium on Microcrystalline and Nanocrystalline Semiconductors-1998 held November 30-December 3, 1998, Boston, Massachusetts, U.S.A. >Long luminescence lifetime of 1.54 #mu# m Er~(3+) luminescence from erbium doped silicon rich silicon oxide and its origin
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Long luminescence lifetime of 1.54 #mu# m Er~(3+) luminescence from erbium doped silicon rich silicon oxide and its origin

机译：掺富硅氧化硅的长发光寿命为1.54＃mu＃m Er〜（3+）

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摘要

The photoluminescent properties of erbium doped silicon rich silicon oxide (SRSO) is investigated. The silicon content of SRSO was varied from 43 to 33 at.percent, and Er concentration was 0.4-0.7 at.percent in all cases. We observe strong 1.54 #mu# m luminescence due to ~4I_(13/2)=>~4I_(15/2) Er~(3+) 4f transition, excited via energy transfer from carrier recombination in silicon nanoclusters to Er 4f shells. The luminescent lifetimes at the room temperature are found to be 4-7 msec, which is longer than that reported from Er in any semiconducting host material, and comparable to that of Er doped SiO_2 and Al_2O_3. The dependence of the Er~(3+) luminescent intensities and lifetimes on temperature, pump power and on background illumination shows that by using SRSO, almost all non-radiative decay paths of excited Er~(3+) can be effectively suppressed, and that such suppression is more important than increasing excitation rate of Er~(3+). A planar waveguide using Er doped SRSO is also demonstrated.
机译：研究了掺do的富硅氧化硅（SRSO）的光致发光性能。在所有情况下，SRSO的硅含量从43到33 at。％不等，Er浓度为0.4-0.7 at。％。我们观察到由于〜4I_（13/2）=>〜4I_（15/2）Er〜（3+）4f跃迁而产生的强1.54＃μmm发光，这是通过将能量从硅纳米团簇中的载流子重组转移到Er 4f壳层而激发的。发现在室温下的发光寿命为4-7毫秒，这比在任何半导体主体材料中从Er报道的发光寿命更长，并且与Er掺杂的SiO_2和Al_2O_3的发光寿命相当。 Er〜（3+）发光强度和寿命与温度，泵浦功率和背景照明的关系表明，通过使用SRSO，几乎可以抑制激发的Er〜（3+）的几乎所有非辐射衰减路径，并且说明这种抑制比增加Er〜（3+）的激发速率更重要。还展示了使用掺Er的SRSO的平面波导。

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