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首页> 外文会议>Symposium on Multicomponent Oxide Films for Electronics held April 6-8,1999,San francisco,California,U.S.A. >Oxygen diffusion in tantalum oxide metal-oxide-metal capacitor structures
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Oxygen diffusion in tantalum oxide metal-oxide-metal capacitor structures

机译：氧化钽金属氧化物金属电容器结构中的氧扩散

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摘要

We have studied structures used in MOM capacitors including Ta_2O_5/TiN/Ti, Ta_2O-5/Ti, Ta-2O_5/TaN/Ti,Ta-2O_5/Wn/Ti, and Ta-2O_5/M where M=Ta,Pt,W,Al, and Si using X-Ray Photoelectron Spectroscopy. We find that Ti and Al are able to reduce the Ta-2O_5 to Ta , forming oxides of Ti and Al, respectively. The diffusion barrier TiN hampers the diffusion of oxygen and therefore postpone the reduction of Ta_2O_5 to higher temperatures. The oxygen migrates from the Ta_2O_5 layer and through the TiN layer to the Ti layer during the heat treatment. As judged by the temperatures at which the reduction of Ta-2O_5 occurs, TaN and WN are more effective oxygen-diffusion barriers than TiN. Leakage current observed in Al/Ta-2O_5/TaN/Ta capacitors is one to two orders of magnitude lower than that observed in Al/Ta_2O_5/TiN/Ti capacitors.
机译：我们研究了用于MOM电容器的结构，包括Ta_2O_5 / TiN / Ti，Ta_2O-5 / Ti，Ta-2O_5 / TaN / Ti，Ta-2O_5 / Wn / Ti和Ta-2O_5 / M，其中M = Ta，Pt，使用X射线光电子能谱分析W，Al和Si。我们发现，Ti和Al能够将Ta-2O_5还原为Ta，分别形成Ti和Al的氧化物。扩散阻挡层TiN阻碍了氧气的扩散，因此将Ta_2O_5的还原推迟到更高的温度。在热处理期间，氧从Ta_2O_5层迁移并通过TiN层迁移到Ti层。根据发生Ta-2O_5还原的温度判断，TaN和WN是比TiN更有效的氧扩散阻挡层。在Al / Ta-2O_5 / TaN / Ta电容器中观察到的泄漏电流比在Al / Ta_2O_5 / TiN / Ti电容器中观察到的泄漏电流低一到两个数量级。

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