首页> 外文会议>Symposium on Multicomponent Oxide Films for Electronics held April 6-8,1999,San francisco,California,U.S.A. >Factors controlling transport properties of interfaces in high-T_C superconductors
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Factors controlling transport properties of interfaces in high-T_C superconductors

机译:控制高T_C超导体中界面传输特性的因素

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A comprehensive understading of the transpor tproperties of interfaces in high-T_c cuprates has been obtained by considering their microstructure, the possibility of bendifng of the electronic band structure in these materials, and the predominant d_x~2-y~2 - symmetry of the order paramete rin most high-T_c cuprates. These factors are of central importance for the critical current density and the normal state resistivity of grain boundaries and their dependencies on boundary misorientation and on applied magnetic and electrical fields. In addition, some of these factors play an important role for the transport properties of other interfaces involving high-T_c superconductors, such as superconductors-normal metal contacts.
机译:考虑到它们的微观结构,这些材料中电子带结构弯曲的可能性以及主要的d_x〜2-y〜2-阶对称性,已经全面了解了高T_c铜酸盐中界面的传输性能。 paramete rin最高T_c铜酸盐。这些因素对于临界电流密度和晶界的常态电阻率以及它们对晶界取向错误以及所施加的磁场和电场的依赖性至关重要。此外,这些因素中的一些因素对于涉及高T_c超导体的其他界面(如超导体-正常金属触点)的传输性能也起着重要作用。

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