TiC and Ti-W-C films have been produced by chemical vapor deposition (CVD). A fractional factorial design was used to study the effects of deposition temperature, C:Ti input, H:Ti input, reactor pressure, and total mass flow on TiC film composition. Statistical models were developed for both titanium at.percent and C:Ti in the film. It was found that the most significant affect on titanium at.percent was the interaction of temperature, pressure and total mass flow. The most important affect on the C:Ti in the deposited film was the interaction C:Ti input, H:Ti, and total mass flow. Ti-W-C films have been deposited at 1050 deg C at various (TiCl_4+W(CO)_6)/CH_4 inlet ratios ranging from 0.53 to 1.01. The characterization of the films revealed that the changes in deposition rate, crystallinity, film orientation, and morphology of various Ti-W-C compositions were affected by (TiCl_4+W(CO)_6)/CH_4 inlet ratios.
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