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首页> 外文会议>Symposium on Organic and Polymeric Materials and Devices―Optical, Electrical and Optoelectronic Properties Apr 1-5, 2002 San Francisco, California, U.S.A. >Determination of Traps in Poly(p-phenylene vinylene) Light Emitting Diodes by Charge-based Deep Level Transient Spectroscopy
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Determination of Traps in Poly(p-phenylene vinylene) Light Emitting Diodes by Charge-based Deep Level Transient Spectroscopy

机译：基于电荷的深能级瞬态光谱法测定聚对亚苯基亚乙烯基发光二极管中的陷阱

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摘要

Charge-based deep level transient spectroscopy (Q-DLTS) has been used to study the defect states that exist within poly(p-phenylene vinylene) (PPV), a semiconducting polymer with a band gap of about 2.4 eV. The technique allows the determination of activation energies, capture cross-sections and trap concentrations. In some circumstances, it is also possible to distinguish between minority and majority carrier traps. The structures investigated here consisted of ITO/PPV/MgAg light emitting diode (LED) devices. Two types of trapping centres were found. The first type has activation energies in the range 0.49 ― 0.53 eV and capture cross-sections of the order of 10~(-16) ―10~(-18) cm~2. It shows a Poole-Frenkel, field assisted-emission process. This level has been identified as a bulk acceptor-like majority carrier (i.e., hole) trap. The second type has activation energies in the range 0.40 ― 0.42 eV and capture cross-sections of the order of 10~(-19) cm~2 . This level has been identified as a minority carrier (i.e., electron) trap. This second trap type is therefore expected to limit minority carrier injection into the PPV layer within the LED, and hence reduce electroluminescence under forward bias conditions.
机译：基于电荷的深能级瞬态光谱法（Q-DLTS）已用于研究存在于带隙约为2.4 eV的半导体聚合物聚对苯撑亚乙烯基（PPV）中的缺陷状态。该技术可以确定活化能，捕获截面和阱浓度。在某些情况下，还可以区分少数载流子陷阱和多数载流子陷阱。这里研究的结构由ITO / PPV / MgAg发光二极管（LED）器件组成。发现了两种诱捕中心。第一类具有在0.49-0.53eV范围内的活化能，并捕获10〜（-16）〜10〜（-18）cm〜2量级的横截面。它显示了Poole-Frenkel现场辅助排放过程。该水平已被确定为类似大量受体的多数载流子（即空穴）陷阱。第二种类型的活化能在0.40〜0.42 eV范围内，捕获的横截面约为10〜（-19）cm〜2。该能级被确定为少数载流子（即电子）陷阱。因此，预期第二种陷阱类型将限制少数载流子注入LED内的PPV层，并因此减少正向偏置条件下的电致发光。

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