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首页> 外文会议>Symposium on Organic and Polymeric Materials and Devices―Optical, Electrical and Optoelectronic Properties Apr 1-5, 2002 San Francisco, California, U.S.A. >Injection and charge transport in polyfluorene polymers
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Injection and charge transport in polyfluorene polymers

机译：聚芴聚合物中的注入和电荷传输

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摘要

An overview of recent results concerning the injection and transport of holes in a range of conjugated fluorene polymers, provided by the Dow Chemical Company, is presented. Time-of-flight measurements in poly(9,9-dioctylfluorene) (PFO) are performed in a range of electric fields and temperatures (200-415 K). It is found that annealing at 380 K results in an irreversible increase of the hole mobility by one order of magnitude. Analysis of the TOF data within the Gaussian disorder model of Baessler and coworkers shows that this effect mainly contributes to the mobility prefactorμ_0, which grows from 2.3x10~(-2) to 2.6x10~(-1) cm~2/Vs after annealing, while the disorder parameters σ and ∑ increase only slightly. Dark-injection transient measurements are performed in poly(9,9-dioctylfluorene-co-bis-N, N'-(4-methoxyphenyL)-bis-N, N'-phenyl-l,4-phenylenediamine) (PFMO) and poly(9,9-dioctylfluorene-co-bis-N, N'-(4-butylphenyl)-bis-N, N'-phenyl-l,4-phenylenediamine) (PFB) polymers for the range of electric fields and in a wide range of sample thicknesses. The lowest studied thickness (0.22 μm) for PFB is much closer to typical device thicknesses (≤0.1 μm) than the thicknesses (～1 μm) required for TOF measurements. It is shown that there are no significant differences in hole transport across the range of thicknesses from 0.22 μm to 1.1 μm indicating that for this material TOF technique can be a reliable tool to characterise materials for device operation. There is found to be an influence on stability of the metal counter-electrode used to perform dark-injection measurements. Specifically Ag and Au are found to give less stable structures than Al.
机译：介绍了有关陶氏化学公司提供的一系列共轭芴聚合物中空穴注入和传输的最新结果的概述。聚（9,9-二辛基芴）（PFO）中的飞行时间测量是在一定范围的电场和温度（200-415 K）下进行的。发现在380K下退火导致空穴迁移率不可逆地增加一个数量级。在Baessler及其同事的高斯失调模型中对TOF数据的分析表明，这种影响主要是导致迁移率因子μ_0的原因，退火后该因子从2.3x10〜（-2）增长到2.6x10〜（-1）cm〜2 / Vs。 ，而无序参数σ和∑仅略有增加。在聚（9,9-二辛基芴-co-bis-N，N'-（4-甲氧基苯基）-bis-N，N'-苯基-1,4-苯二胺）（PFMO）和聚（9,9-二辛基芴-co-bis-N，N'-（4-丁基苯基）-bis-N，N'-苯基-1,4-苯二胺）（PFB）聚合物广泛的样品厚度。与TOF测量所需的厚度（〜1μm）相比，PFB的最低研究厚度（0.22μm）与典型的器件厚度（≤0.1μm）更加接近。结果表明，在从0.22μm到1.1μm的厚度范围内，空穴传输没有显着差异，这表明对于这种材料，TOF技术可以成为表征器件工作材料的可靠工具。发现对用于执行暗注入测量的金属对电极的稳定性有影响。特别地，发现Ag和Au比Al提供的稳定性差。

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