Wide bandap semiconductor power devices

机译：宽带隙半导体功率器件

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The present status of high-voltage power semiconductor switching devices is reviewed. The choice and design of device structures are presented. The simulated performance of the key devices in 4H-SiC is described. The progress in high-voltage power device experimental demonstration is described. The material and process technology issues that need to be addressed for device commercialization are discussed.

机译：回顾了高压功率半导体开关器件的现状。介绍了器件结构的选择和设计。描述了4H-SiC中关键器件的仿真性能。描述了高压功率器件实验演示的进展。讨论了设备商业化需要解决的材料和工艺技术问题。

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《Symposium on Power Semiconductor Materials and Devices December 1-4, 1997, Boston, Massachusetts, U.S.A.》|1997年|p.89-102|共14页
会议地点 Boston MA(US)
作者
T.P.Chow; N.Rmaungul; M.Ghezzo;
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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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Wide bandap semiconductor power devices

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