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首页> 外文会议>Symposium on Power Semiconductor Materials and Devices December 1-4, 1997, Boston, Massachusetts, U.S.A. >Electronic properties of wide bandgap materials
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Electronic properties of wide bandgap materials

机译：宽带隙材料的电子性能

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摘要

Secondary electron emission spectroscopy is used to investigated the generation and transport of impact-ionized electrons in wide bandgap material. Secondary electron yield and energy distributioin measurements from C(100) and CVD diamon samples are analyzed to obtain information about the internal gain and electron energy distrigution following impact ionization, as well as the effects of the transport process on the internal electron distribution. By studying the emission from surfaces having a negative electron affinity (NEA), the toal transmitted intensity and the full energy spectrum of the internal electrons are revealed in the measurements. Energy spectra measured from the diamon samples contain a low-energy peak whose energy position and width are idependent of incident beam energy. This suggests that the peak represents the electron distribution produced by impact-ionization events. A large percentage of the total emitted electrons lie within this peak, indicating that the impact-ionization process is very efficient at generating low-energy electrons. Very high yields are measured from both samples, establishing the presence of high internal gain and efficient electron transport in the material. From the linear slope of the yield curves, the escape depth of the low-energy electrons is deduced to be much larger than approx 0.1 mu m in both diamond samples.
机译：二次电子发射光谱用于研究宽带隙材料中碰撞离子化电子的产生和传输。分析了C（100）和CVD金刚石样品的二次电子产率和能量分布测量结果，以获得有关内部电离和撞击电离后电子能量分布以及传输过程对内部电子分布的影响的信息。通过研究具有负电子亲和力（NEA）的表面的发射，可以在测量中显示出总透射强度和内部电子的完整能谱。从金刚石样品测得的能谱包含一个低能峰，其能量位置和宽度与入射束能量无关。这表明该峰代表了由碰撞电离事件产生的电子分布。总发射电子中有很大一部分位于该峰内，表明碰撞电离过程在产生低能电子方面非常有效。从两个样品中都测得非常高的产率，从而确定了材料中高内部增益和有效电子传输的存在。根据屈服曲线的线性斜率，推论出两个钻石样品中低能电子的逸出深度都远大于约0.1微米。

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