Influence of open-tube GA diffusion on the characteristics for hyristor

机译：开管GA扩散对液敏电阻特性的影响

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Open-tube Ga diffusion into a SiO_2/Si structure was used for fabrication of the high speed thyristor. The advantages of open-tube Ga diffusion are as folloows; it is easier to operate and easier to control the profile of the Ga concentration during processing, a clean surface, which is free from alloy spots can be obtainedk this technique ensures to improve the on-state characteristics and dynamic characteristics.

机译：将开管Ga扩散到SiO_2 / Si结构中用于制造高速晶闸管。开管Ga扩散的优点如下：它在加工过程中易于操作，并且易于控制Ga的浓度分布，因此可以获得无合金斑点的清洁表面，该技术可确保改善导通特性和动态特性。

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来源
《Symposium on Power Semiconductor Materials and Devices December 1-4, 1997, Boston, Massachusetts, U.S.A.》|1997年|p.219-222|共4页
会议地点 Boston MA(US)
作者
Wen Ruimei; Pei SUhua;
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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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Influence of open-tube GA diffusion on the characteristics for hyristor

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