• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>Symposium Proceedings vol.808; Symposium on Amorphous and Nanocrystalline Silicon Science and Technology - 2004; 20040413-16; San Francisco,CA(US) >Surface Processes during Growth of Hydrogenated Amorphous Silicon
【24h】

Surface Processes during Growth of Hydrogenated Amorphous Silicon

机译：氢化非晶硅生长过程中的表面过程

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Hydrogenated amorphous silicon films for photovoltaics and thin film transistors are deposited from silane containing discharges. The radicals generated in the plasma such as SiH_3 and H impinge on the surface and lead to silicon film growth through a complex network of elementary surface processes that include adsorption, abstraction, insertion and diffusion of various radicals. Mechanism and kinetics of these reactions determine the film composition and quality. Developing deposition strategies for improving the film quality requires a fundamental understanding of the radical-surface interaction mechanisms. We have been using in situ multiple total internal reflection Fourier transform infrared spectroscopy and in situ spectroscopic ellipsometry in conjunction with atomistic simulations to determine the elementary surface reaction and diffusion mechanisms. Synergistic use of experiments and atomistic simulations elucidate elementary processes occurring on the surface. Herein, we review our current understanding of the reaction mechanisms that lead to a-Si:H film growth with special emphasis on the reactions of the SiH_3 radical.
机译：用于光伏发电的氢化非晶硅薄膜和薄膜晶体管是从含硅烷的放电中沉积的。等离子体中产生的自由基（例如SiH_3和H）撞击表面，并通过复杂的基本表面过程网络（包括各种自由基的吸附，提取，插入和扩散）导致硅膜生长。这些反应的机理和动力学决定了膜的组成和质量。开发用于改善膜质量的沉积策略需要对自由基-表面相互作用机理有基本的了解。我们一直在使用原位多重全内反射傅里叶变换红外光谱和原位椭偏椭圆光谱法以及原子模拟方法来确定基本的表面反应和扩散机理。实验和原子模拟的协同使用可阐明表面上发生的基本过程。本文中，我们回顾了我们目前对导致a-Si：H薄膜生长的反应机理的理解，特别强调了SiH_3自由基的反应。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号