Passivation of Defects in ZnO by Hydrogen Plasma Irradiation

机译：氢等离子体辐照钝化ZnO中的缺陷

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Hydrogen doping effects on luminescence properties of bulk ZnO samples were examined by using a pulse-modulated plasma irradiation technique. Three kinds of ZnO samples, including both single- and poly-crystals, were employed as specimens. Secondary-ion-mass-spectroscopy analysis revealed that the surface layer to 100 nm was doped with hydrogen after the irradiation and its concentration was in the order of 10~(17) cm~(-3). The efficiency of band edge emission was increased by the hydrogenation. However, the degree of the improvements depended on impurity and defect concentration in the original samples.

机译：通过使用脉冲调制等离子体辐射技术，研究了氢掺杂对块状ZnO样品的发光性能的影响。三种ZnO样品（包括单晶和多晶）均用作样品。二次离子质谱分析表明，辐照后至100 nm的表面层均掺杂有氢，其浓度约为10〜（17）cm〜（-3）。氢化增加了带边缘发射的效率。但是，改善的程度取决于原始样品中的杂质和缺陷浓度。

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《Symposium on Progress in Semiconductors Ⅱ―Electronic and Optoelectronic Applications Dec 2-5, 2002 Boston, Massachusetts, U.S.A.》|2002年|p.169-174|共6页
会议地点 Boston MA(US);Boston MA(US)
作者
Naoki Ohashi; Takamasa Ishigaki; Takashi Sekiguchi; Isao Sakaguchi; Hajime Haneda;
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作者单位

Advanced Materials Laboratory, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 Japan;

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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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2. Defect passivation in chemical vapour deposited fine-grained polycrystalline silicon by plasma hydrogenation [J] . L. Carnel, I. Gordon, K. Van Nieuwenhuysen, Thin Solid Films . 2005,第1a2期

机译：等离子体加氢在化学气相沉积的细晶多晶硅中的缺陷钝化
3. Passivation kinetics of two types of defects in polysilicon TFT by plasma hydrogenation [J] . Wu I.-W., Huang T.-Y. IEEE Electron Device Letters . 1991,第4期

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Passivation of Defects in ZnO by Hydrogen Plasma Irradiation

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