Effects of MOCVD Growth Conditions on Optical and Structural Properties of GaInNAs/GaAs/InGaAs/GaAs Quantum Wells

机译：MOCVD生长条件对GaInNAs / GaAs / InGaAs / GaAs量子阱光学和结构性质的影响

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Effects of MOCVD growth parameters on structural and optical properties of double-quantum-well structures containing uncoupled GaInNAs/GaAs and InGaAs/GaAs quantum wells have been investigated. By varying growth temperature, growth rate, Ⅴ/Ⅲ ratio, and DMHy flow rates, we have achieved a longer-wavelength emission from a GaInNAs well than from an InGaAs well grown in the same structure. GalnNAs/GaAs multiple-quantum-well structures grown under optimum conditions emitted at 1.25μm.

机译：研究了MOCVD生长参数对包含未耦合GaInNAs / GaAs和InGaAs / GaAs量子阱的双量子阱结构的结构和光学性质的影响。通过改变生长温度，生长速率，Ⅴ/Ⅲ比和DMHy流量，我们获得了比在相同结构中生长的InGaAs阱更长的波长发射。在最佳条件下生长的GalnNAs / GaAs多量子阱结构以1.25μm发射。

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《Symposium on Progress in Semiconductors Ⅱ―Electronic and Optoelectronic Applications Dec 2-5, 2002 Boston, Massachusetts, U.S.A.》|2002年|p.469-474|共6页
会议地点 Boston MA(US);Boston MA(US)
作者
Abdel-Rahman A. El-Emawy; Hongjun Cao; Noppadon Nuntawong; Chiyu Liu; Marek Osinski;
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Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, NM 87106-4343, U.S.A.;

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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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机译：生长停顿对InGaAsN-InGaAsP量子阱结构和光学性质的影响
2. Effects of growth temperature on the structural and optical properties of 1.6 μm GaInNAs/GaAs multiple quantum wells [J] . H. Y. Liu, C. M. Tey, C. Y. Jin, Applied Physics Letters . 2006,第19期

机译：生长温度对1.6μmGaInNAs / GaAs多量子阱结构和光学性质的影响
3. Enhancement of Structural and Optical Properties of 1.3 mu m InGaAs/GaAs Quantum Dots through the Growth of a Barrier at an Elevated Temperature [J] . Pyun S. H., Jeong Weon G. Journal of the Korean Physical Society . 2009,第2期

机译：通过在高温下生长势垒来增强1.3μmInGaAs / GaAs量子点的结构和光学性质
4. Effects of MOCVD Growth Conditions on Optical and Structural Properties of GaInNAs/GaAs/InGaAs/GaAs Quantum Wells [C] . Abdel-Rahman A. El-Emawy, Hongjun Cao, Noppadon Nuntawong, Materials Research Society Symposium . 2003

机译：MOCVD生长条件对增益/ GAAS / INGAAS / GAAS量子阱的光学和结构性质的影响
5. Defect Creation in InGaAs/GaAs Multiple Quantum Wells: Correlation of Crystalline and Optical Properties with Epitaxial Growth Conditions. [D] . Karow, Matthias. 2014

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6. Correlating Photoluminescence and Structural Properties of Uncapped and GaAs-Capped Epitaxial InGaAs Quantum Dots [O] . Arka B. Dey, Milan K. Sanyal, Ian Farrer, -1

机译：未封盖和GaAs封盖的外延InGaAs量子点的光致发光与结构性质的相关性
7. In-mole-fraction of InGaAs Insertion Layers Effects on the Structural and Optical Properties of GaSb Quantum Dots Grown on (001) GaAs Substrate [O] . Suwit Kiravittaya, Kamonchanok Khoklang, Supachok Thainoi, 1970

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8. Optical Properties of InGaAsN/GaAs Quantum Well and Quantum Dot Structures for Longwavelength Emission. [R] . Volovik, B. V., Kovsh, A. R., Passenberg, W., 2000

机译：用于长波发射的InGaasN / Gaas量子阱和量子点结构的光学特性。

Effects of MOCVD Growth Conditions on Optical and Structural Properties of GaInNAs/GaAs/InGaAs/GaAs Quantum Wells

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